|
IDK10G65C5XTMA1
|
DIODE SCHOTTKY 650V 10A TO263-2 |
Infineon Technologies |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
PG-TO263-2 |
No Recovery Time > 500mA (Io) |
1.7mA @ 650V |
300pF @ 1V, 1MHz |
1.8V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDH10S120AKSA1
|
DIODE SCHOTTKY 1200V 10A TO220-2 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-2 |
No Recovery Time > 500mA (Io) |
240µA @ 1200V |
500pF @ 1V, 1MHz |
1.8V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
MSC010SDA120K
|
DIODE SCHOTTKY 1.2KV 10A TO220-2 |
Microchip Technology |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220 [K] |
No Recovery Time > 500mA (Io) |
|
|
1.5V @ 10A |
1200V |
0ns |
|
|
|
PCDP1065G1_T0_00001
|
TO-220AC, SIC |
Panjit International Inc. |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
70µA @ 650V |
364pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
|
|
RJU3051TDPP-EJ#T2
|
DIODE TO-263 |
Renesas Electronics America |
TO-220-2 Full Pack |
10A (DC) |
Standard |
Through Hole |
TO-220FP-2L |
Fast Recovery =< 500ns, > 200mA (Io) |
1µA @ 360V |
|
1.7V @ 10A |
360V |
25ns |
150°C (Max) |
|
|
RJS6004TDPP-EJ#YJ1
|
DIODE SCHOTTKY TO220FP |
Renesas Electronics America |
TO-220-2 Full Pack |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220FP-2L |
No Recovery Time > 500mA (Io) |
10µA @ 600V |
|
1.8V @ 10A |
600V |
0ns |
150°C (Max) |
|
|
RJU6052TDPP-AJ#T2
|
DIODE GEN PURP 600V TO220FP |
Renesas Electronics America |
TO-220-2 Full Pack |
10A (DC) |
Standard |
Through Hole |
TO-220FP-2L |
Fast Recovery =< 500ns, > 200mA (Io) |
1µA @ 600V |
|
3V @ 10A |
600V |
25ns |
150°C (Max) |
|
|
RJU3051SDPE-00#J3
|
DIODE GEN PURP 360V 10A LDPAK |
Renesas Electronics America Inc |
SC-83 |
10A (DC) |
Standard |
Surface Mount |
LDPAK |
Fast Recovery =< 500ns, > 200mA (Io) |
1µA @ 360V |
|
1.7V @ 10A |
360V |
25ns |
-55°C ~ 150°C |
|
|
IDW10S120FKSA1
|
RECTIFIER DIODE |
Rochester Electronics, LLC |
TO-247-3 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO247-3-41 |
No Recovery Time > 500mA (Io) |
240µA @ 1.2V |
580pF @ 1V, 1MHz |
1.8V @ 10A |
1.2V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
SCS210AJHRTLL
|
DIODE SCHOTTKY 650V 10A TO263AB |
Rohm Semiconductor |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263AB |
No Recovery Time > 500mA (Io) |
200µA @ 600V |
365pF @ 1V, 1MHz |
1.55V @ 10A |
650V |
0ns |
175°C (Max) |
Automotive, AEC-Q101 |
|
S10MC R6
|
DIODE SCHOTTKY DO214AB |
Taiwan Semiconductor Corporation |
DO-214AB, SMC |
10A (DC) |
Standard |
Surface Mount |
DO-214AB (SMC) |
Standard Recovery >500ns, > 200mA (Io) |
1µA @ 1000V |
60pF @ 4V, 1MHz |
1.1V @ 10A |
1000V |
|
-55°C ~ 150°C |
|
|
S10JCH
|
DIODE GEN PURP 600V 10A DO214AB |
Taiwan Semiconductor Corporation |
DO-214AB, SMC |
10A (DC) |
Standard |
Surface Mount |
DO-214AB (SMC) |
Standard Recovery >500ns, > 200mA (Io) |
1µA @ 600V |
60pF @ 4V, 1MHz |
1.1V @ 10A |
600V |
|
-55°C ~ 150°C |
Automotive, AEC-Q101 |
|
S10KC R7
|
DIODE SCHOTTKY DO214AB |
Taiwan Semiconductor Corporation |
DO-214AB, SMC |
10A (DC) |
Standard |
Surface Mount |
DO-214AB (SMC) |
Standard Recovery >500ns, > 200mA (Io) |
1µA @ 800V |
60pF @ 4V, 1MHz |
1.1V @ 10A |
800V |
|
-55°C ~ 150°C |
|
|
CLS03(TE16L,DNSO,Q
|
DIODE SCHOTTKY 60V 10A L-FLAT |
Toshiba Semiconductor and Storage |
L-FLAT™ |
10A (DC) |
Schottky |
Surface Mount |
L-FLAT™ (4x5.5) |
Fast Recovery =< 500ns, > 200mA (Io) |
1mA @ 60V |
345pF @ 10V, 1MHz |
0.58V @ 10A |
60V |
|
-40°C ~ 125°C |
|
|
UJ3D1210K2
|
1200V 10A SIC SCHOTTKY DIODE G3, |
UnitedSiC |
TO-247-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247-2 |
No Recovery Time > 500mA (Io) |
110µA @ 1200V |
510pF @ 1V, 1MHz |
1.6V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
|