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- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
| Наименование | Описание | Производитель
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Package / Case
|
Обратное пиковое напряжение
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Тип диода
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Вид монтажа
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Тип корпуса
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Технология
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Рабочая температура
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Ток утечки
|
|---|---|---|---|---|---|---|---|---|---|---|
| MSCDC200H70AG | PM-DIODE-SIC-SBD-SP6C | Microchip Technology | Module | 700 V | Single Phase | Chassis Mount | SP6C | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 800 µA @ 700 V |
| MSCDC100H70AG | PM-DIODE-SIC-SBD-SP6C | Microchip Technology | Module | 700 V | Single Phase | Chassis Mount | SP6C | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 400 µA @ 700 V |
| MSCDC100H170AG | PM-DIODE-SIC-SBD-SP6C | Microchip Technology | Module | 1.7kV | Single Phase | Chassis Mount | SP6C | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 400 µA @ 1700 V |
| MSCDC200H170AG | PM-DIODE-SIC-SBD-SP6C | Microchip Technology | Module | 1.7kV | Single Phase | Chassis Mount | SP6C | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 800 µA @ 1700 V |
| MSCDC100H120AG | PM-DIODE-SIC-SBD-SP6C | Microchip Technology | Module | 1.2kV | Single Phase | Chassis Mount | SP6C | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 400µA @ 1200V |
| MSCDC200H120AG | PM-DIODE-SIC-SBD-SP6C | Microchip Technology | Module | 1.2kV | Single Phase | Chassis Mount | SP6C | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 800µA @ 1200V |
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