-
- Operating Temperature
- Current - Reverse Leakage @ Vr
- Voltage - Forward (Vf) (Max) @ If
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Technology
|
Operating Temperature
|
Current - Reverse Leakage @ Vr
|
|---|---|---|---|---|---|---|---|---|---|---|
| MSCDC200H70AG | PM-DIODE-SIC-SBD-SP6C | Microchip Technology | Module | 700 V | Single Phase | Chassis Mount | SP6C | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 800 µA @ 700 V |
| MSCDC100H70AG | PM-DIODE-SIC-SBD-SP6C | Microchip Technology | Module | 700 V | Single Phase | Chassis Mount | SP6C | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 400 µA @ 700 V |
| MSCDC100H170AG | PM-DIODE-SIC-SBD-SP6C | Microchip Technology | Module | 1.7kV | Single Phase | Chassis Mount | SP6C | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 400 µA @ 1700 V |
| MSCDC200H170AG | PM-DIODE-SIC-SBD-SP6C | Microchip Technology | Module | 1.7kV | Single Phase | Chassis Mount | SP6C | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 800 µA @ 1700 V |
| MSCDC100H120AG | PM-DIODE-SIC-SBD-SP6C | Microchip Technology | Module | 1.2kV | Single Phase | Chassis Mount | SP6C | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 400µA @ 1200V |
| MSCDC200H120AG | PM-DIODE-SIC-SBD-SP6C | Microchip Technology | Module | 1.2kV | Single Phase | Chassis Mount | SP6C | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 800µA @ 1200V |
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- 50
- 100