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- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
| Наименование | Описание | Производитель
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Package / Case
|
Обратное пиковое напряжение
|
Тип диода
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Вид монтажа
|
Тип корпуса
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Технология
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Рабочая температура
|
Ток утечки
|
|---|---|---|---|---|---|---|---|---|---|---|
| MSCDC50X1201AG | PM-DIODE-SIC-SBD-SP1F | Microchip Technology | Module | 1.2kV | Three Phase | Chassis Mount | SP1F | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 200µA @ 1200V |
| MSCDC50H1201AG | PM-DIODE-SIC-SBD-SP1F | Microchip Technology | Module | 1.2kV | Single Phase | Chassis Mount | SP1F | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 200µA @ 1200V |
| MSCDC50X701AG | PM-DIODE-SIC-SBD-SP1F | Microchip Technology | Module | 700 V | Three Phase | Chassis Mount | SP1F | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 200µA @ 700V |
| MSCDC50X1701AG | PM-DIODE-SIC-SBD-SP1F | Microchip Technology | Module | 1.7kV | Three Phase | Chassis Mount | SP1F | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 200µA @ 1700V |
| MSCDC50H1701AG | PM-DIODE-SIC-SBD-SP1F | Microchip Technology | Module | 1.7kV | Single Phase | Chassis Mount | SP1F | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 200µA @ 1700V |
| MSCDC50H701AG | PM-DIODE-SIC-SBD-SP1F | Microchip Technology | Module | 700 V | Three Phase | Chassis Mount | SP1F | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 200µA @ 700V |
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