-
- Operating Temperature
- Current - Reverse Leakage @ Vr
- Voltage - Forward (Vf) (Max) @ If
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Technology
|
Operating Temperature
|
Current - Reverse Leakage @ Vr
|
|---|---|---|---|---|---|---|---|---|---|---|
| MSCDC50X1201AG | PM-DIODE-SIC-SBD-SP1F | Microchip Technology | Module | 1.2kV | Three Phase | Chassis Mount | SP1F | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 200µA @ 1200V |
| MSCDC50H1201AG | PM-DIODE-SIC-SBD-SP1F | Microchip Technology | Module | 1.2kV | Single Phase | Chassis Mount | SP1F | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 200µA @ 1200V |
| MSCDC50X701AG | PM-DIODE-SIC-SBD-SP1F | Microchip Technology | Module | 700 V | Three Phase | Chassis Mount | SP1F | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 200µA @ 700V |
| MSCDC50X1701AG | PM-DIODE-SIC-SBD-SP1F | Microchip Technology | Module | 1.7kV | Three Phase | Chassis Mount | SP1F | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 200µA @ 1700V |
| MSCDC50H1701AG | PM-DIODE-SIC-SBD-SP1F | Microchip Technology | Module | 1.7kV | Single Phase | Chassis Mount | SP1F | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 200µA @ 1700V |
| MSCDC50H701AG | PM-DIODE-SIC-SBD-SP1F | Microchip Technology | Module | 700 V | Three Phase | Chassis Mount | SP1F | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 200µA @ 700V |
- 10
- 15
- 50
- 100