Найдено: 8
Наименование Описание Производитель
Package / Case
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Конфигурация диода
Средний выпрямленный ток (Io) на диод
S8-4148E3/TR7 DIODE ARRAY GP 75V 400MA 8SOIC Microchip Technology 8-SOIC (0.154", 3.90mm Width) Standard Surface Mount 8-SOIC Fast Recovery =< 500ns, > 200mA (Io) 100nA @ 50V 1.2V @ 100mA 75V 5ns -55°C ~ 150°C 4 Independent 400mA (DC)
S8-4150/TR7 DIODE ARRAY GP 50V 400MA 8SOIC Microchip Technology 8-SOIC (0.154", 3.90mm Width) Standard Surface Mount 8-SOIC Fast Recovery =< 500ns, > 200mA (Io) 100nA @ 50V 1V @ 200mA 50V 4ns -55°C ~ 150°C 4 Independent 400mA (DC)
S8-4148/TR13 DIODE ARRAY GP 75V 400MA 8SOIC Microchip Technology 8-SOIC (0.154", 3.90mm Width) Standard Surface Mount 8-SOIC Fast Recovery =< 500ns, > 200mA (Io) 100nA @ 50V 1.2V @ 100mA 75V 5ns -55°C ~ 150°C 4 Independent 400mA (DC)
S8-4150/TR13 DIODE ARRAY GP 50V 400MA 8SOIC Microchip Technology 8-SOIC (0.154", 3.90mm Width) Standard Surface Mount 8-SOIC Fast Recovery =< 500ns, > 200mA (Io) 100nA @ 50V 1V @ 200mA 50V 4ns -55°C ~ 150°C 4 Independent 400mA (DC)
S8-4148E3/TR13 DIODE ARRAY GP 75V 400MA 8SOIC Microchip Technology 8-SOIC (0.154", 3.90mm Width) Standard Surface Mount 8-SOIC Fast Recovery =< 500ns, > 200mA (Io) 100nA @ 50V 1.2V @ 100mA 75V 5ns -55°C ~ 150°C 4 Independent 400mA (DC)
S8-4148/TR7 DIODE ARRAY GP 75V 400MA 8SOIC Microchip Technology 8-SOIC (0.154", 3.90mm Width) Standard Surface Mount 8-SOIC Fast Recovery =< 500ns, > 200mA (Io) 100nA @ 50V 1.2V @ 100mA 75V 5ns -55°C ~ 150°C 4 Independent 400mA (DC)
S8-4150E3/TR7 DIODE ARRAY GP 50V 400MA 8SOIC Microchip Technology 8-SOIC (0.154", 3.90mm Width) Standard Surface Mount 8-SOIC Fast Recovery =< 500ns, > 200mA (Io) 100nA @ 50V 1V @ 200mA 50V 4ns -55°C ~ 150°C 4 Independent 400mA (DC)
S8-4150E3/TR13 DIODE ARRAY GP 50V 400MA 8SOIC Microchip Technology 8-SOIC (0.154", 3.90mm Width) Standard Surface Mount 8-SOIC Fast Recovery =< 500ns, > 200mA (Io) 100nA @ 50V 1V @ 200mA 50V 4ns -55°C ~ 150°C 4 Independent 400mA (DC)