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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G5S12020B | SIC SCHOTTKY DIODE 1200V 20A 3-P | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 10A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 33A (DC) | ||
| G3S06510B | SIC SCHOTTKY DIODE 650V 10A 3-PI | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1.7V @ 5A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 27A (DC) | ||
| G3S06512B | SIC SCHOTTKY DIODE 650V 12A 3-PI | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1.7V @ 6A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 27A (DC) | ||
| G4S06516BT | SIC SCHOTTKY DIODE 650V 16A 3-PI | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 25.9A (DC) | ||
| G3S06516B | SIC SCHOTTKY DIODE 650V 16A 3-PI | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 25.5A (DC) | ||
| G5S12020BM | SIC SCHOTTKY DIODE 1200V 20A 3-P | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 30µA @ 1200V | 1.7V @ 10A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 33A (DC) | ||
| G4S12020BM | SIC SCHOTTKY DIODE 1200V 20A 3-P | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 30µA @ 1200V | 1.6V @ 10A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 33.2A (DC) | ||
| G3S12004B | SIC SCHOTTKY DIODE 1200V 4A 3-PI | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 2A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 8.5A (DC) | ||
| G5S12040BM | SIC SCHOTTKY DIODE 1200V 40A 3-P | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 20A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 62A (DC) | ||
| G3S06560B | SIC SCHOTTKY DIODE 650V 4A 3-PIN | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1.7V @ 30A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 95A (DC) | ||
| G3S12015L | SIC SCHOTTKY DIODE 1200V 15A 3-P | Global Power Technology-GPT | TO-247-3 | 55A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1700pF @ 0V, 1MHz | 1.7V @ 15A | 1200V | 0ns | -55°C ~ 175°C | ||
| G3S17020B | SIC SCHOTTKY DIODE 1700V 20A 3-P | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 100µA @ 1700V | 1.7V @ 10A | 1700V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 24A (DC) | ||
| G5S12015L | SIC SCHOTTKY DIODE 1200V 15A 3-P | Global Power Technology-GPT | TO-247-3 | 55A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1370pF @ 0V, 1MHz | 1.7V @ 15A | 1200V | 0ns | -55°C ~ 175°C | ||
| G3S06506B | SIC SCHOTTKY DIODE 650V 6A 3-PIN | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1.7V @ 3A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 14A (DC) | ||
| G5S12016B | SIC SCHOTTKY DIODE 1200V 16A 3-P | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 8A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 27.9A (DC) |
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