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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G3S06508B | SIC SCHOTTKY DIODE 650V 8A 3-PIN | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 14A (DC) | ||
| G5S12010BM | SIC SCHOTTKY DIODE 1200V 10A 3-P | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 5A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 19.35A (DC) | ||
| GAS06520L | SIC SCHOTTKY DIODE 650V 20A 3-PI | Global Power Technology-GPT | TO-247-3 | 66.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1390pF @ 0V, 1MHz | 1.7V @ 20A | 650V | 0ns | -55°C ~ 175°C | ||
| G5S12016BM | SIC SCHOTTKY DIODE 1200V 16A 3-P | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 8A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 27.9A (DC) | ||
| G4S06530BT | SIC SCHOTTKY DIODE 650V 30A 3-PI | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1.7V @ 15A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 39A (DC) | ||
| G3S17010B | SIC SCHOTTKY DIODE 1700V 10A 3-P | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1700V | 1.7V @ 5A | 1700V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 29.5A (DC) | ||
| G3S12010BM | SIC SCHOTTKY DIODE 1200V 10A 3-P | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 5A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 19.8A (DC) | ||
| G5S12040B | SIC SCHOTTKY DIODE 1200V 40A 3-P | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 20A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 62A (DC) | ||
| G4S06520BT | SIC SCHOTTKY DIODE 650V 20A 3-PI | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 31.2A (DC) | ||
| G3S12006B | SIC SCHOTTKY DIODE 1200V 6A 3-PI | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 1.7V @ 3A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 14A (DC) | ||
| G3S06540B | SIC SCHOTTKY DIODE 650V 40A 3-PI | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1.7V @ 20A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 60A (DC) | ||
| G3S12010B | SIC SCHOTTKY DIODE 1200V 10A 3-P | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 5A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 39A (DC) | ||
| G3S12030B | SIC SCHOTTKY DIODE 1200V 30A 3-P | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 15A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 42A (DC) | ||
| G5S12030BM | SIC SCHOTTKY DIODE 1200V 30A 3-P | Global Power Technology-GPT | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 15A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 55A (DC) | ||
| G3S06520B | SIC SCHOTTKY DIODE 650V 20A 3-PI | Global Power Technology-GPT | TO-247-3 | 40A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 690pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C |
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