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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MURT30010R | DIODE MODULE 100V 150A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 150A | 100V | 100ns | -55°C ~ 150°C | 1 Pair Common Anode | 150A |
| MSRT15060(A) | DIODE MODULE 600V 150A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 600V | 1.2V @ 150A | 600V | 1 Pair Common Cathode | 150A (DC) | ||
| MBRTA80060R | DIODE SCHOTTKY 60V 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 60V | 780mV @ 400A | 60V | -55°C ~ 150°C | 1 Pair Common Anode | 400A | |
| MSRTA400140A | DIODE MODULE 1.4KV 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 1.2V @ 400A | 1400V | -55°C ~ 150°C | 1 Pair Common Cathode | 400A (DC) | |
| MSRTA50060A | DIODE MODULE 600V 500A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 1.2V @ 500A | 600V | -55°C ~ 150°C | 1 Pair Common Cathode | 500A (DC) | |
| MBRTA50035 | DIODE SCHOTTKY 35V 250A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 35V | 700mV @ 250A | 35V | -55°C ~ 150°C | 1 Pair Common Cathode | 250A | |
| MBRT120150R | DIODE SCHOTTKY 150V 60A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 150V | 880mV @ 60A | 150V | -55°C ~ 150°C | 1 Pair Common Anode | 60A | |
| MSRT250160A | DIODE MODULE 1.6KV 250A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 15µA @ 600V | 1.2V @ 250A | 1600V | -55°C ~ 150°C | 1 Pair Common Cathode | 250A (DC) | |
| MBRT60080 | DIODE MODULE 80V 300A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 880mV @ 300A | 80V | -55°C ~ 150°C | 1 Pair Common Cathode | 300A | |
| MSRT150100A | DIODE MODULE 1KV 150A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 600V | 1.2V @ 150A | 1000V | -55°C ~ 150°C | 1 Pair Common Cathode | 150A | |
| MURTA600120 | DIODE GEN 1.2KV 300A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 1200V | 2.6V @ 300A | 1200V | -55°C ~ 150°C | 1 Pair Common Cathode | 300A | |
| MSRT25080(A) | DIODE MODULE 800V 250A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 15µA @ 600V | 1.2V @ 250A | 800V | -55°C ~ 150°C | 1 Pair Common Cathode | 250A (DC) | |
| MSRTA500120A | DIODE MODULE 1.2KV 500A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 1.2V @ 500A | 1200V | -55°C ~ 150°C | 1 Pair Common Cathode | 500A (DC) | |
| MBRT40060R | DIODE MODULE 60V 200A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 800mV @ 200A | 60V | -55°C ~ 150°C | 1 Pair Common Anode | 200A | |
| MBRTA80020R | DIODE SCHOTTKY 20V 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 720mV @ 400A | 20V | -55°C ~ 150°C | 1 Pair Common Anode | 400A |
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