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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBRT120200 | DIODE SCHOTTKY 200V 60A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 920mV @ 60A | 200V | -55°C ~ 150°C | 1 Pair Common Cathode | 60A | |
| MSRTA30080AD | DIODE GEN PURP 800V 300A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 20µA @ 800V | 1.1V @ 300A | 800V | -55°C ~ 150°C | 1 Pair Series Connection | 300A | |
| MBRT12035 | DIODE MODULE 35V 60A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 60A | 35V | -55°C ~ 150°C | 1 Pair Common Cathode | 60A | |
| MURT40010R | DIODE MODULE 100V 200A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 200A | 100V | 125ns | -55°C ~ 150°C | 1 Pair Common Anode | 200A |
| MBRT40030R | DIODE MODULE 30V 200A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 200A | 30V | -55°C ~ 150°C | 1 Pair Common Anode | 200A | |
| MSRT20080(A) | DIODE MODULE 800V 200A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 600V | 1.2V @ 200A | 800V | -55°C ~ 150°C | 1 Pair Common Cathode | 200A (DC) | |
| MSRT150140A | DIODE MODULE 1.4KV 150A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 600V | 1.2V @ 150A | 1400V | -55°C ~ 150°C | 1 Pair Common Cathode | 150A | |
| MBRTA500150R | DIODE SCHOTTKY 150V 250A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 150V | 880mV @ 250A | 150V | -55°C ~ 150°C | 1 Pair Common Anode | 250A | |
| MSRT20080(A)D | DIODE GEN PURP 800V 200A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 800V | 1.1V @ 200A | 800V | -55°C ~ 150°C | 1 Pair Series Connection | 200A | |
| MURT40020R | DIODE MODULE 200V 200A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 200A | 200V | 125ns | -55°C ~ 150°C | 1 Pair Common Anode | 200A |
| MSRT150160(A)D | DIODE GEN 1.6KV 150A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 1600V | 1.1V @ 150A | 1600V | -55°C ~ 150°C | 1 Pair Series Connection | 150A | |
| MBRTA60035L | DIODE SCHOTTKY 35V 300A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 35V | 600mV @ 300A | 35V | -55°C ~ 150°C | 1 Pair Common Cathode | 300A | |
| MBRT50045 | DIODE MODULE 45V 250A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 250A | 45V | -55°C ~ 150°C | 1 Pair Common Cathode | 250A | |
| MSRT200140(A)D | DIODE GEN 1.4KV 200A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 1400V | 1.1V @ 200A | 1400V | -55°C ~ 150°C | 1 Pair Series Connection | 200A | |
| MBRTA800100 | DIODE SCHOTTKY 100V 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 100V | 840mV @ 400A | 100V | -55°C ~ 150°C | 1 Pair Common Cathode | 400A |
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