-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBR200100CTS | DIODE MODULE 100V 200A SOT227 | GeneSiC Semiconductor | SOT-227-4 | Schottky | Screw Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 80V | 950mV @ 100A | 100V | -40°C ~ 175°C | 2 Independent | 200A (DC) | ||
| MUR2X030A04 | DIODE GEN PURP 400V 30A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Standard | Chassis Mount | SOT-227 | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 400V | 1.3V @ 30A | 400V | -55°C ~ 175°C | 2 Independent | 30A | ||
| MBR2X160A100 | DIODE SCHOTTKY 100V 160A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 100V | 840mV @ 160A | 100V | -40°C ~ 150°C | 2 Independent | 160A | ||
| MBR2X120A120 | DIODE SCHOTTKY 120V 120A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 120V | 880mV @ 120A | 120V | -40°C ~ 150°C | 2 Independent | 120A | ||
| MBR2X120A080 | DIODE SCHOTTKY 80V 120A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 80V | 840mV @ 120A | 80V | -40°C ~ 150°C | 2 Independent | 120A | ||
| GD2X50MPS12N | 1200V 100A SOT-227 SIC SCHOTTKY | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Silicon Carbide Schottky | Chassis Mount | SOT-227 | No Recovery Time > 500mA (Io) | 15µA @ 1200V | 1.8V @ 50A | 1200V | 0ns | -55°C ~ 175°C | 2 Independent | 76A (DC) | SiC Schottky MPS™ |
| MUR2X060A12 | DIODE GEN PURP 1.2KV 60A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Standard | Chassis Mount | SOT-227 | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 1200V | 2.35V @ 60A | 1200V | -55°C ~ 175°C | 2 Independent | 60A | ||
| MUR2X120A10 | DIODE GEN PURP 1KV 120A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Standard | Chassis Mount | SOT-227 | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 1000V | 2.35V @ 120A | 1000V | -55°C ~ 175°C | 2 Independent | 120A | ||
| MBR2X060A200 | DIODE SCHOTTKY 200V 60A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 200V | 920mV @ 60A | 200V | -40°C ~ 150°C | 2 Independent | 60A | ||
| GD2X150MPS06N | 650V 300A SOT-227 SIC SCHOTTKY M | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Silicon Carbide Schottky | Chassis Mount | SOT-227 | No Recovery Time > 500mA (Io) | 10µA @ 650V | 1.8V @ 150A | 650V | 0ns | -55°C ~ 175°C | 2 Independent | 150A (DC) | SiC Schottky MPS™ |
| GD2X100MPS06N | 650V 200A SOT-227 SIC SCHOTTKY M | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Silicon Carbide Schottky | Chassis Mount | SOT-227 | No Recovery Time > 500mA (Io) | 5µA @ 650V | 1.8V @ 100A | 650V | 0ns | -55°C ~ 175°C | 2 Independent | 108A (DC) | SiC Schottky MPS™ |
| MBR2X050A200 | DIODE SCHOTTKY 200V 100A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 200V | 920mV @ 50A | 200V | -40°C ~ 150°C | 2 Independent | 100A | ||
| MBR2X080A120 | DIODE SCHOTTKY 120V 80A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 120V | 880mV @ 80A | 120V | -40°C ~ 150°C | 2 Independent | 80A | ||
| MBR2X100A180 | DIODE SCHOTTKY 180V 100A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 180V | 920mV @ 100A | 180V | -40°C ~ 150°C | 2 Independent | 100A | ||
| MBR2X060A150 | DIODE SCHOTTKY 150V 60A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 150V | 880mV @ 60A | 150V | -40°C ~ 150°C | 2 Independent | 60A |
- 10
- 15
- 50
- 100