- Производитель
- Тип диода
- Тип корпуса
-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
Наименование | Описание | Производитель
|
Package / Case
|
Обратное пиковое напряжение
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Технология
|
Рабочая температура
|
Скорость
|
Ток утечки
|
Ток, макс.
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
Серия
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MURH10040R | DIODE GEN PURP 400V 100A D-67 | GeneSiC Semiconductor | D-67 | 100A | Standard, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 100A | 400V | 90ns | |||||||||
MURF30060 | DIODE GEN PURP 600V 150A TO244 | GeneSiC Semiconductor | TO-244AB | Standard | Chassis Mount | TO-244 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 600V | 1.7V @ 150A | 600V | 150ns | -55°C ~ 150°C | 1 Pair Common Cathode | 150A | |||||||
MBR200100CTS | DIODE MODULE 100V 200A SOT227 | GeneSiC Semiconductor | SOT-227-4 | Schottky | Screw Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 80V | 950mV @ 100A | 100V | -40°C ~ 175°C | 2 Independent | 200A (DC) | ||||||||
MBRT40035RL | DIODE SCHOTTKY 35V 200A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 35V | 600mV @ 200A | 35V | -55°C ~ 150°C | 1 Pair Common Anode | 200A | ||||||||
MBRT60035 | DIODE MODULE 35V 300A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 300A | 35V | -55°C ~ 150°C | 1 Pair Common Cathode | 300A | ||||||||
MBR7530R | DIODE SCHOTTKY REV 30V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 75A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 30V | 750mV @ 75A | 30V | -55°C ~ 150°C | |||||||||
MBRTA80060 | DIODE SCHOTTKY 60V 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 60V | 780mV @ 400A | 60V | -55°C ~ 150°C | 1 Pair Common Cathode | 400A | ||||||||
MBRH12080R | DIODE SCHOTTKY 80V 120A D-67 | GeneSiC Semiconductor | D-67 | 120A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 20V | 840mV @ 120A | 80V | ||||||||||
MURT10060R | DIODE ARRAY GP REV POLAR 3TOWER | GeneSiC Semiconductor | Three Tower | Standard, Reverse Polarity | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.7V @ 100A | 600V | 75ns | -55°C ~ 150°C | 1 Pair Common Anode | 50A | |||||||
GKR71/08 | DIODE GEN PURP 800V 95A DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 95A | Standard | Chassis, Stud Mount | DO-5 | Standard Recovery >500ns, > 200mA (Io) | 10mA @ 800V | 1.5V @ 60A | 800V | -40°C ~ 180°C | |||||||||
MURF30020 | DIODE GEN PURP 200V 150A TO244 | GeneSiC Semiconductor | TO-244AB | Standard | Chassis Mount | TO-244 | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 200V | 1V @ 150A | 200V | -55°C ~ 150°C | 1 Pair Common Cathode | 150A | ||||||||
MUR10060CTR | DIODE MODULE 600V 50A 2TOWER | GeneSiC Semiconductor | Twin Tower | Standard | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.7V @ 50A | 600V | 110ns | -55°C ~ 150°C | 1 Pair Common Anode | 50A | |||||||
MBR3530 | DIODE SCHOTTKY 30V 35A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 35A | Schottky | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA @ 20V | 680mV @ 35A | 30V | -55°C ~ 150°C | |||||||||
MBRT20035 | DIODE MODULE 35V 100A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 100A | 35V | -55°C ~ 150°C | 1 Pair Common Cathode | 100A | ||||||||
MURTA60060 | DIODE MODULE 600V 300A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.7V @ 300A | 600V | 280ns | -55°C ~ 150°C | 1 Pair Common Cathode | 300A |
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