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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Рабочая температура перехода
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ACGRAT103-HF | DIODE GEN PURP 600V 1A 2010 | Comchip Technology | 2010 (5025 Metric) | 1A | Standard | Surface Mount | 2010 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 600V | 8pF @ 4V, 1MHz | 1V @ 1A | 600V | -65°C ~ 175°C | Automotive, AEC-Q101 |
| ACGRAT102-HF | DIODE GEN PURP 400V 1A 2010 | Comchip Technology | 2010 (5025 Metric) | 1A | Standard | Surface Mount | 2010 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 400V | 8pF @ 4V, 1MHz | 1V @ 1A | 400V | -65°C ~ 175°C | Automotive, AEC-Q101 |
| ACGRAT102L-HF | DIODE GEN PURP 400V 1A 2010 | Comchip Technology | 2010 (5025 Metric) | 1A | Standard | Surface Mount | 2010 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 400V | 8.2pF @ 4V, 1MHz | 930mV @ 1A | 400V | -65°C ~ 175°C | Automotive, AEC-Q101 |
| ACGRAT105L-HF | DIODE GEN PURP 1KV 1A 2010 | Comchip Technology | 2010 (5025 Metric) | 1A | Standard | Surface Mount | 2010 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 1000V | 8.2pF @ 4V, 1MHz | 930mV @ 1A | 1000V | -65°C ~ 175°C | Automotive, AEC-Q101 |
| ACGRAT104L-HF | DIODE GEN PURP 800V 1A 2010 | Comchip Technology | 2-SMD, No Lead | 1A | Standard | Surface Mount | 2010 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 800V | 8pF @ 4V, 1MHz | 1V @ 1A | 800V | -65°C ~ 175°C | Automotive, AEC-Q101 |
| ACDBAT360-HF | DIODE SCHOTTKY 60V 3A 2010 | Comchip Technology | 2010 (5025 Metric) | 3A | Schottky | Surface Mount | 2010 | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 60V | 180pF @ 4V, 1MHz | 700mV @ 3A | 60V | -55°C ~ 150°C | Automotive, AEC-Q101 |
| ACGRAT101L-HF | DIODE GEN PURP 200V 1A 2010 | Comchip Technology | 2010 (5025 Metric) | 1A | Standard | Surface Mount | 2010 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 200V | 8pF @ 4V, 1MHz | 1V @ 1A | 200V | -65°C ~ 175°C | Automotive, AEC-Q101 |
| ACGRAT103L-HF | DIODE GEN PURP 600V 1A 2010 | Comchip Technology | 2010 (5025 Metric) | 1A | Standard | Surface Mount | 2010 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 600V | 8.2pF @ 4V, 1MHz | 930mV @ 1A | 600V | -65°C ~ 175°C | Automotive, AEC-Q101 |
| ACDBAT3100-HF | DIODE SCHOTTKY 100V 3A 2010 | Comchip Technology | 2010 (5025 Metric) | 3A | Schottky | Surface Mount | 2010 | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 100V | 180pF @ 4V, 1MHz | 850mV @ 3A | 100V | -55°C ~ 150°C | Automotive, AEC-Q101 |
| ACDBAT340-HF | DIODE SCHOTTKY 40V 3A 2010 | Comchip Technology | 2010 (5025 Metric) | 3A | Schottky | Surface Mount | 2010 | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 40V | 180pF @ 4V, 1MHz | 500mV @ 3A | 40V | -55°C ~ 125°C | Automotive, AEC-Q101 |
| ACGRAT105-HF | DIODE GEN PURP 1KV 1A 2010 | Comchip Technology | 2010 (5025 Metric) | 1A | Standard | Surface Mount | 2010 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 1000V | 8pF @ 4V, 1MHz | 1V @ 1A | 1000V | -65°C ~ 175°C | Automotive, AEC-Q101 |
- 10
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- 100