- Тип диода
- Производитель
- Тип корпуса
-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RURP8120 | 8A, 1200V ULTRAFAST DIODE | Harris Corporation | TO-220-2 | 8A | Avalanche | Through Hole | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 1200V | 2.1V @ 8A | 1200V | 110ns | -65°C ~ 175°C | ||||
| BYG21M M2G | DIODE AVALANCHE 1.5A DO214AC | Taiwan Semiconductor Corporation | DO-214AC, SMA | 1.5A | Avalanche | Surface Mount | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 1000V | 13pF @ 4V, 1MHz | 1.6V @ 1.5A | 120ns | -55°C ~ 150°C | ||||
| BYG21MHM3_A/H | DIODE AVALANCHE 1KV 1.5A DO214AC | Vishay General Semiconductor - Diodes Division | DO-214AC, SMA | 1.5A | Avalanche | Surface Mount | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 1000V | 1.6V @ 1.5A | 1000V | 120ns | -55°C ~ 150°C | Automotive, AEC-Q101 | |||
| AU3PMHM3/87A | DIODE AVALANCHE 1KV 1.4A TO277 | Vishay General Semiconductor - Diodes Division | TO-277, 3-PowerDFN | 1.4A (DC) | Avalanche | Surface Mount | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 1000V | 42pF @ 4V, 1MHz | 2.5V @ 3A | 1000V | 75ns | -55°C ~ 175°C | eSMP® | ||
| BY203-20STR | DIODE AVALANCHE 2KV 250MA SOD57 | Vishay General Semiconductor - Diodes Division | SOD-57, Axial | 250mA | Avalanche | Through Hole | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 1200V | 2.4V @ 200mA | 2000V | 300ns | -55°C ~ 150°C | ||||
| BYG10Y-M3/TR | DIODE AVALANCHE 1.6KV 1.5A | Vishay General Semiconductor - Diodes Division | DO-214AC, SMA | 1.5A | Avalanche | Surface Mount | DO-214AC (SMA) | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 1600V | 1.15V @ 1.5A | 1600V | 4µs | -55°C ~ 150°C | ||||
| BYG10MHM3_A/H | DIODE AVALANCHE 1KV 1.5A DO214AC | Vishay General Semiconductor - Diodes Division | DO-214AC, SMA | 1.5A | Avalanche | Surface Mount | DO-214AC (SMA) | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 1000V | 1.15V @ 1.5A | 1000V | 4µs | -55°C ~ 150°C | Automotive, AEC-Q101 | |||
| BYV38-TAP | DIODE AVALANCHE 1KV 2A SOD57 | Vishay General Semiconductor - Diodes Division | SOD-57, Axial | 2A | Avalanche | Through Hole | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 1000V | 1.1V @ 1A | 1000V | 300ns | -55°C ~ 175°C | ||||
| AS3BD-M3/H | DIODE AVALANCHE 200V 3A DO214AA | Vishay General Semiconductor - Diodes Division | DO-214AA, SMB | 3A (DC) | Avalanche | Surface Mount | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | 20µA @ 600V | 40pF @ 4V, 1MHz | 1.05V @ 3A | 200V | -55°C ~ 175°C | ||||
| AU3PMHM3_A/I | DIODE AVALANCH 1KV 1.4A TO277A | Vishay General Semiconductor - Diodes Division | TO-277, 3-PowerDFN | 1.4A | Avalanche | Surface Mount | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 1000V | 42pF @ 4V, 1MHz | 2.5V @ 3A | 1000V | 75ns | -55°C ~ 175°C | Automotive, AEC-Q101, eSMP® | ||
| AU2PDHM3/87A | DIODE AVALANCHE 200V 1.6A TO277A | Vishay General Semiconductor - Diodes Division | TO-277, 3-PowerDFN | 1.6A (DC) | Avalanche | Surface Mount | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 200V | 42pF @ 4V, 1MHz | 1.9V @ 2A | 200V | 75ns | -55°C ~ 175°C | eSMP® | ||
| BYW34-TR | DIODE AVALANCHE 400V 2A SOD57 | Vishay General Semiconductor - Diodes Division | SOD-57, Axial | 2A | Avalanche | Through Hole | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 400V | 1.1V @ 1A | 400V | 200ns | -55°C ~ 175°C | ||||
| BYG22AHM3_A/H | DIODE AVALANCHE 50V 2A DO214AC | Vishay General Semiconductor - Diodes Division | DO-214AC, SMA | 2A | Avalanche | Surface Mount | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 50V | 1.1V @ 2A | 50V | 25ns | -55°C ~ 150°C | Automotive, AEC-Q101 | |||
| BYV28-100-TR | DIODE AVALANCHE 100V 3.5A SOD64 | Vishay General Semiconductor - Diodes Division | SOD-64, Axial | 3.5A | Avalanche | Through Hole | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 100V | 1.1V @ 5A | 100V | 30ns | -55°C ~ 175°C | ||||
| BYG10DHE3_A/H | DIODE AVALANCHE 200V 1.5A DO214 | Vishay General Semiconductor - Diodes Division | DO-214AC, SMA | 1.5A | Avalanche | Surface Mount | DO-214AC (SMA) | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 200V | 1.15V @ 1.5A | 200V | 4µs | -55°C ~ 150°C | Automotive, AEC-Q101 |
- 10
- 15
- 50
- 100