-
- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Breakdown (V(BR)GSS)
|
Power - Max
|
Mounting Type
|
Operating Temperature
|
Supplier Device Package
|
FET Type
|
Input Capacitance (Ciss) (Max) @ Vds
|
Current - Drain (Idss) @ Vds (Vgs=0)
|
Voltage - Cutoff (VGS off) @ Id
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2SK879-GR(TE85L,F) | JFET N-CH 0.1W USM | Toshiba Semiconductor and Storage | SC-70, SOT-323 | 100mW | Surface Mount | 125°C (TJ) | USM | N-Channel | 8.2pF @ 10V | 2.6mA @ 10V | 400mV @ 100nA | |
| 2SK880-Y(TE85L,F) | JFET N-CH 50V 0.1W USM | Toshiba Semiconductor and Storage | SC-70, SOT-323 | 50V | 100mW | Surface Mount | 125°C (TJ) | USM | N-Channel | 13pF @ 10V | 1.2mA @ 10V | 1.5V @ 100nA |
| 2SK879-Y(TE85L,F) | JFET N-CH 0.1W USM | Toshiba Semiconductor and Storage | SC-70, SOT-323 | 100mW | Surface Mount | 125°C (TJ) | USM | N-Channel | 8.2pF @ 10V | 1.2mA @ 10V | 400mV @ 100nA |
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- 15
- 50
- 100