Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 125A Pmax 660W

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 1
  • IXBX50N360HV
    IGBT 3600V 125A 660W TO-247PLUS
    IXYS
    • Manufacturer: IXYS
    • Series: BIMOSFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3 Variant
    • Supplier Device Package: TO-247PLUS-HV
    • Reverse Recovery Time (trr): 1.7µs
    • Power - Max: 660W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 125A
    • Voltage - Collector Emitter Breakdown (Max): 3600V
    • Test Condition: 960V, 50A, 5Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 420A
    • Gate Charge: 210nC
    • Td (on/off) @ 25°C: 46ns/205ns
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