Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 113A Pmax 625W
-
- Supplier Device Package
- Input Type
- IGBT Type
- Current - Collector Cutoff (Max)
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Test Condition
- Current - Collector Pulsed (Icm)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Series
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- Manufacturer: Microsemi Corporation
- Series: POWER MOS 7®
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3 Variant
- Power - Max: 625W
- Input Type: Standard
- Current - Collector (Ic) (Max): 113A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Test Condition: 600V, 45A, 5Ohm, 15V
- IGBT Type: PT
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
- Current - Collector Pulsed (Icm): 170A
- Switching Energy: 900µJ (on), 905µJ (off)
- Gate Charge: 185nC
- Td (on/off) @ 25°C: 18ns/100ns
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
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- Manufacturer: Microchip Technology
- Series: POWER MOS 7®
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3 Variant
- Power - Max: 625W
- Input Type: Standard
- Current - Collector (Ic) (Max): 113A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Test Condition: 600V, 45A, 5Ohm, 15V
- IGBT Type: PT
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
- Current - Collector Pulsed (Icm): 170A
- Switching Energy: 900µJ (on), 905µJ (off)
- Gate Charge: 185nC
- Td (on/off) @ 25°C: 18ns/100ns
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100