Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 120A Pmax 520W

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 5
  • APTGT75A170D1G
    IGBT MODULE 1700V 120A 520W D1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: D1
    • Supplier Device Package: D1
    • Configuration: Half Bridge
    • Power - Max: 520W
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 1700V
    • Current - Collector Cutoff (Max): 5mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
    • NTC Thermistor: No
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  • APTGT75SK170D1G
    IGBT MODULE 1700V 120A 520W D1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: D1
    • Supplier Device Package: D1
    • Configuration: Single
    • Power - Max: 520W
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 1700V
    • Current - Collector Cutoff (Max): 5mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
    • NTC Thermistor: No
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  • IRG7PSH54K10DPBF
    IGBT 1200V 120A 520W TO274AA
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: SUPER-247™ (TO-274AA)
    • Reverse Recovery Time (trr): 170ns
    • Power - Max: 520W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 50A, 5Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 4.8mJ (on), 2.8mJ (off)
    • Gate Charge: 435nC
    • Td (on/off) @ 25°C: 110ns/490ns
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  • APTGT75DA170D1G
    IGBT MODULE 1700V 120A 520W D1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: D1
    • Supplier Device Package: D1
    • Configuration: Single
    • Power - Max: 520W
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 1700V
    • Current - Collector Cutoff (Max): 5mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
    • NTC Thermistor: No
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  • IRG7PSH54K10DPBF
    IGBT, 120A I(C), 1200V V(BR)CES,
    International Rectifier
    • Manufacturer: International Rectifier
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: SUPER-247™ (TO-274AA)
    • Reverse Recovery Time (trr): 170ns
    • Power - Max: 520W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 50A, 5Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 4.8mJ (on), 2.8mJ (off)
    • Gate Charge: 435nC
    • Td (on/off) @ 25°C: 110ns/490ns
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