Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 100A Pmax 416W

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 6
  • APT75GT120JU3
    IGBT MOD 1200V 100A 416W SOT227
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOTOP
    • Supplier Device Package: SOT-227
    • Configuration: Single
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 5mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: No
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  • APT75GT120JU3
    IGBT MOD 1200V 100A 416W SOT227
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOTOP
    • Supplier Device Package: SOT-227
    • Configuration: Single
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 5mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: No
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  • APT75GT120JU2
    IGBT MOD 1200V 100A 416W SOT227
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOTOP
    • Supplier Device Package: SOT-227
    • Configuration: Single
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 5mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: No
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  • SGW50N60HSFKSA1
    IGBT 600V 100A 416W TO247-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3-1
    • Power - Max: 416W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 50A, 6.8Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 1.96mJ
    • Gate Charge: 179nC
    • Td (on/off) @ 25°C: 47ns/310ns
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  • SGW50N60HS
    IGBT, 100A, 600V, N-CHANNEL
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3
    • Power - Max: 416W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 50A, 6.8Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 1.96mJ
    • Gate Charge: 179nC
    • Td (on/off) @ 25°C: 47ns/310ns
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  • SGW50N60HS
    IGBT, 100A, 600V, N-CHANNEL
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3-1
    • Power - Max: 416W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 50A, 6.8Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 1.96mJ
    • Gate Charge: 179nC
    • Td (on/off) @ 25°C: 47ns/310ns
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