Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 100A Pmax 268W

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 5
  • FGA5065ADF
    INSULATED GATE BIPOLAR TRANSISTO
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3PN
    • Reverse Recovery Time (trr): 31.8ns
    • Power - Max: 268W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 50A, 6Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 1.35mJ (on), 309µJ (off)
    • Gate Charge: 72.2nC
    • Td (on/off) @ 25°C: 20.8ns/62.4ns
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  • FGA5065ADF
    IGBT TRENCH/FS 650V 100A TO3PN
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3PN
    • Reverse Recovery Time (trr): 31.8ns
    • Power - Max: 268W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 50A, 6Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 1.35mJ (on), 309µJ (off)
    • Gate Charge: 72.2nC
    • Td (on/off) @ 25°C: 20.8ns/62.4ns
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  • FGHL50T65SQDT
    IGBT, 650 V, 50 A FIELD STOP TRE
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 268W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 12.5A, 4.7Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 223µJ (on), 91.13µJ (off)
    • Gate Charge: 99.7 nC
    • Td (on/off) @ 25°C: 22.8ns/70ns
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  • FGHL50T65SQ
    FS4TIGBT TO247 50A 650V
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 268W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 25A, 4.7Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 410µJ (on), 88µJ (off)
    • Gate Charge: 99nC
    • Td (on/off) @ 25°C: 19ns/93ns
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  • FGH50T65SQD-F155
    IGBT TRENCH/FS 650V 100A TO247-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Reverse Recovery Time (trr): 31ns
    • Power - Max: 268W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 12.5A, 4.7Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 180µJ (on), 45µJ (off)
    • Gate Charge: 99nC
    • Td (on/off) @ 25°C: 22ns/105ns
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