Semiconductors, Transistors, Transistors - IGBTs - Arrays Pmax 1040W
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- Supplier Device Package
- Input Type
- IGBT Type
- Current - Collector Cutoff (Max)
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Test Condition
- Current - Collector Pulsed (Icm)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Series
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- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: D-3 Module
- Supplier Device Package: D3
- Configuration: Half Bridge
- Power - Max: 1040W
- Current - Collector (Ic) (Max): 300A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector Cutoff (Max): 6mA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
- Input Capacitance (Cies) @ Vce: 14nF @ 25V
- NTC Thermistor: No
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- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: D-3 Module
- Supplier Device Package: D3
- Configuration: Half Bridge
- Power - Max: 1040W
- Current - Collector (Ic) (Max): 300A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector Cutoff (Max): 6mA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
- Input Capacitance (Cies) @ Vce: 14nF @ 25V
- NTC Thermistor: No
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- Manufacturer: IXYS
- Series: BIMOSFET™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
- Reverse Recovery Time (trr): 360ns
- Power - Max: 1040W
- Input Type: Standard
- Current - Collector (Ic) (Max): 110A
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Test Condition: 1360V, 42A, 1Ohm, 15V
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 42A
- Current - Collector Pulsed (Icm): 300A
- Switching Energy: 3.8mJ (off)
- Gate Charge: 358nC
- Td (on/off) @ 25°C: 26ns/418ns
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- Manufacturer: IXYS
- Series: BIMOSFET™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
- Reverse Recovery Time (trr): 1.5µs
- Power - Max: 1040W
- Input Type: Standard
- Current - Collector (Ic) (Max): 200A
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
- Current - Collector Pulsed (Icm): 580A
- Gate Charge: 350nC
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- Manufacturer: IXYS
- Series: BIMOSFET™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264AA
- Reverse Recovery Time (trr): 360ns
- Power - Max: 1040W
- Input Type: Standard
- Current - Collector (Ic) (Max): 110A
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Test Condition: 1360V, 42A, 1Ohm, 15V
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 42A
- Current - Collector Pulsed (Icm): 300A
- Switching Energy: 3.8mJ (off)
- Gate Charge: 358nC
- Td (on/off) @ 25°C: 26ns/418ns
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- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 125°C
- Package / Case: Module
- Supplier Device Package: Module
- Configuration: Single
- Power - Max: 1040W
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector Cutoff (Max): 5mA
- Input: Standard
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
- Input Capacitance (Cies) @ Vce: 14nF @ 25V
- NTC Thermistor: No
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- Manufacturer: Powerex Inc.
- Series: IGBTMOD™
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: Module
- Supplier Device Package: Module
- Configuration: Half Bridge
- Power - Max: 1040W
- Current - Collector (Ic) (Max): 400A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector Cutoff (Max): 1mA
- Input: Standard
- Vce(on) (Max) @ Vge, Ic: 6.5V @ 15V, 400A
- Input Capacitance (Cies) @ Vce: 63nF @ 10V
- NTC Thermistor: No
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- Manufacturer: IXYS
- Series: GenX3™, XPT™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: PLUS264™
- Reverse Recovery Time (trr): 420ns
- Power - Max: 1040W
- Input Type: Standard
- Current - Collector (Ic) (Max): 164A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Test Condition: 600V, 80A, 2Ohm, 15V
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
- Current - Collector Pulsed (Icm): 320A
- Switching Energy: 4.95mJ (on), 2.78mJ (off)
- Gate Charge: 215nC
- Td (on/off) @ 25°C: 29ns/192ns
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- Manufacturer: IXYS
- Series: BIMOSFET™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264AA
- Reverse Recovery Time (trr): 1.5µs
- Power - Max: 1040W
- Input Type: Standard
- Current - Collector (Ic) (Max): 200A
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
- Current - Collector Pulsed (Icm): 580A
- Gate Charge: 350nC
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