Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 118A

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 6
  • APT45GR65SSCD10
    INSULATED GATE BIPOLAR TRANSISTO
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D3Pak
    • Reverse Recovery Time (trr): 80ns
    • Power - Max: 543W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 118A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 433V, 45A, 4.3Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
    • Current - Collector Pulsed (Icm): 224A
    • Gate Charge: 203nC
    • Td (on/off) @ 25°C: 15ns/100ns
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  • APT45GR65B2DU30
    INSULATED GATE BIPOLAR TRANSISTO
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: T-MAX™ [B2]
    • Reverse Recovery Time (trr): 80ns
    • Power - Max: 543W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 118A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 433V, 45A, 4.3Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
    • Current - Collector Pulsed (Icm): 224A
    • Gate Charge: 203nC
    • Td (on/off) @ 25°C: 15ns/100ns
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  • IXXH60N65C4
    IGBT 650V 118A 455W TO247AD
    IXYS
    • Manufacturer: IXYS
    • Series: GenX4™, XPT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 (IXXH)
    • Power - Max: 455W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 118A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 60A, 5Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A
    • Current - Collector Pulsed (Icm): 240A
    • Switching Energy: 3.2mJ (on), 830µJ (off)
    • Gate Charge: 94nC
    • Td (on/off) @ 25°C: 37ns/133ns
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  • APT45GR65BSCD10
    INSULATED GATE BIPOLAR TRANSISTO
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • Reverse Recovery Time (trr): 80ns
    • Power - Max: 543W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 118A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 433V, 45A, 4.3Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
    • Current - Collector Pulsed (Icm): 224A
    • Gate Charge: 203nC
    • Td (on/off) @ 25°C: 15ns/100ns
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  • VS-GT75YF120NT
    ECONO - 4 PACK IGBT
    Vishay General Semiconductor - Diodes Division
    • Manufacturer: Vishay General Semiconductor - Diodes Division
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Module
    • Configuration: Full Bridge
    • Power - Max: 431W
    • Current - Collector (Ic) (Max): 118A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 100µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
    • NTC Thermistor: Yes
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  • VS-GT75YF120UT
    ECONO - 4 PACK IGBT
    Vishay General Semiconductor - Diodes Division
    • Manufacturer: Vishay General Semiconductor - Diodes Division
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Module
    • Configuration: Full Bridge
    • Power - Max: 431W
    • Current - Collector (Ic) (Max): 118A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 100µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
    • NTC Thermistor: Yes
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