- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
- Power - Max
-
- Supplier Device Package
- Input Type
- IGBT Type
- Current - Collector Cutoff (Max)
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Test Condition
- Current - Collector Pulsed (Icm)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Configuration
|
Operating Temperature
|
Supplier Device Package
|
Input Type
|
IGBT Type
|
Current - Collector Cutoff (Max)
|
Vce(on) (Max) @ Vge, Ic
|
Input
|
Test Condition
|
Current - Collector Pulsed (Icm)
|
Reverse Recovery Time (trr)
|
NTC Thermistor
|
Switching Energy
|
Gate Charge
|
Td (on/off) @ 25°C
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXXH60N65C4 | IGBT 650V 118A 455W TO247AD | IXYS | TO-247-3 | 118A | 650V | 455W | Through Hole | -55°C ~ 175°C (TJ) | TO-247 (IXXH) | Standard | PT | 2.2V @ 15V, 60A | 400V, 60A, 5Ohm, 15V | 240A | 3.2mJ (on), 830µJ (off) | 94nC | 37ns/133ns | GenX4™, XPT™ | |||||
| APT45GR65B2DU30 | INSULATED GATE BIPOLAR TRANSISTO | Microsemi Corporation | TO-247-3 | 118A | 650V | 543W | Through Hole | -55°C ~ 150°C (TJ) | T-MAX™ [B2] | Standard | NPT | 2.4V @ 15V, 45A | 433V, 45A, 4.3Ohm, 15V | 224A | 80ns | 203nC | 15ns/100ns | ||||||
| APT45GR65SSCD10 | INSULATED GATE BIPOLAR TRANSISTO | Microsemi Corporation | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 118A | 650V | 543W | Surface Mount | -55°C ~ 150°C (TJ) | D3Pak | Standard | NPT | 2.4V @ 15V, 45A | 433V, 45A, 4.3Ohm, 15V | 224A | 80ns | 203nC | 15ns/100ns | ||||||
| APT45GR65BSCD10 | INSULATED GATE BIPOLAR TRANSISTO | Microsemi Corporation | TO-247-3 | 118A | 650V | 543W | Through Hole | -55°C ~ 150°C (TJ) | TO-247 | Standard | NPT | 2.4V @ 15V, 45A | 433V, 45A, 4.3Ohm, 15V | 224A | 80ns | 203nC | 15ns/100ns | ||||||
| VS-GT75YF120NT | ECONO - 4 PACK IGBT | Vishay General Semiconductor - Diodes Division | Module | 118A | 1200V | 431W | Chassis Mount | Full Bridge | -40°C ~ 150°C (TJ) | Trench Field Stop | 100µA | 2.6V @ 15V, 75A | Standard | Yes | |||||||||
| VS-GT75YF120UT | ECONO - 4 PACK IGBT | Vishay General Semiconductor - Diodes Division | Module | 118A | 1200V | 431W | Chassis Mount | Full Bridge | -40°C ~ 150°C (TJ) | Trench Field Stop | 100µA | 2.6V @ 15V, 75A | Standard | Yes |
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