Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 110A

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 69
  • APTGL90DH120T3G
    IGBT MODULE 1200V 110A 385W SP3
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • Configuration: Asymmetrical Bridge
    • Power - Max: 385W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
    • NTC Thermistor: Yes
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  • APTGF90A60T1G
    IGBT MODULE 600V 110A 416W SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • Configuration: Half Bridge
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • APTGF90H60TG
    IGBT MODULE 600V 110A 416W SP4
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Full Bridge Inverter
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • APTGT75DH120T3G
    IGBT MODULE 1200V 110A 357W SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • Configuration: Asymmetrical Bridge
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: Yes
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  • APTGL90DA120T1G
    IGBT MODULE 1200V 110A 385W SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • Configuration: Single
    • Power - Max: 385W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
    • NTC Thermistor: Yes
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  • IXSN55N120AU1
    IGBT MOD 1200V 110A 500W SOT227B
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • Configuration: Single
    • Power - Max: 500W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 1mA
    • Input: Standard
    • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 55A
    • Input Capacitance (Cies) @ Vce: 8nF @ 25V
    • NTC Thermistor: No
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  • APT50GT60BRDQ2G
    IGBT 600V 110A 446W TO247
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Thunderbolt IGBT®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 [B]
    • Reverse Recovery Time (trr): 22ns
    • Power - Max: 446W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 50A, 5Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 995µJ (on), 1070µJ (off)
    • Gate Charge: 240nC
    • Td (on/off) @ 25°C: 14ns/240ns
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  • APTGL90A120T1G
    IGBT MODULE 1200V 110A 385W SP1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • Configuration: Half Bridge
    • Power - Max: 385W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
    • NTC Thermistor: Yes
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  • APTGT75A120D1G
    IGBT MODULE 1200V 110A 357W D1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: D1
    • Supplier Device Package: D1
    • Configuration: Half Bridge
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 4mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.345 nF @ 25 V
    • NTC Thermistor: No
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  • APTGF90A60TG
    IGBT MODULE 600V 110A 416W SP4
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Half Bridge
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • APTGL90DDA120T3G
    IGBT MODULE 1200V 110A 385W SP3
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • Configuration: Dual Boost Chopper
    • Power - Max: 385W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
    • NTC Thermistor: Yes
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  • MSCGLQ50DDU120CTBL2NG
    PM-IGBT-SBD-BL2
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: Module
    • Configuration: Full Bridge
    • Power - Max: 375W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 25µA
    • Input: Standard
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
    • Input Capacitance (Cies) @ Vce: 2.77nF @ 25V
    • NTC Thermistor: Yes
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  • APTGF90DH60T3G
    IGBT MODULE 600V 110A 416W SP3
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • Configuration: Asymmetrical Bridge
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: Yes
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  • APTGT75H120TG
    IGBT MODULE 1200V 110A 357W SP4
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Full Bridge Inverter
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: Yes
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  • APTGT75A120T1G
    IGBT MODULE 1200V 110A 357W SP1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • Configuration: Half Bridge
    • Power - Max: 357W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: Yes
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