Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 10A

Found: 94
  • IGBT 3 CHIP 600V WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 10A, 25Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
    • Current - Collector Pulsed (Icm): 30A
    • Td (on/off) @ 25°C: 29ns/266ns
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  • N CHANNEL IGBT FOR SWITCHING APP
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Package / Case: TO-204AA
    • Supplier Device Package: TO-3
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 400V
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  • N CHANNEL IGBT FOR SWITCHING APP
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 400V
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  • IGBT 600V 10A 50W DPAK
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Series: PowerMESH™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: DPAK
    • Reverse Recovery Time (trr): 95ns
    • Power - Max: 50W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 480V, 3A, 10Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
    • Current - Collector Pulsed (Icm): 24A
    • Switching Energy: 33µJ (off)
    • Gate Charge: 21nC
    • Td (on/off) @ 25°C: 5ns/53ns
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  • TRENCH GATE FIELD-STOP IGBT, H S
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263)
    • Reverse Recovery Time (trr): 134.5ns
    • Power - Max: 88W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 5A, 47Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
    • Current - Collector Pulsed (Icm): 20A
    • Switching Energy: 56µJ (on), 78.5µJ (off)
    • Gate Charge: 43nC
    • Td (on/off) @ 25°C: 30ns/140ns
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  • IGBT 600V 10A 28W TO220-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: TrenchStop™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: PG-TO220-3-31
    • Reverse Recovery Time (trr): 123ns
    • Power - Max: 28W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 6A, 23Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
    • Current - Collector Pulsed (Icm): 18A
    • Switching Energy: 200µJ
    • Gate Charge: 42nC
    • Td (on/off) @ 25°C: 9.4ns/130ns
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  • IGBT 1200V 10A 55W DPAK
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Series: PowerMESH™
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: DPAK
    • Power - Max: 55W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 960V, 7A, 1kOhm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
    • Current - Collector Pulsed (Icm): 20A
    • Switching Energy: 3.2µJ (on), 15mJ (off)
    • Gate Charge: 29nC
    • Td (on/off) @ 25°C: 570ns/-
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  • IGBT 3 CHIP 600V WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 10A, 25Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
    • Current - Collector Pulsed (Icm): 30A
    • Td (on/off) @ 25°C: 29ns/266ns
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  • IGBT 650V 5A TO252
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Series: Alpha IGBT™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252 (DPAK)
    • Reverse Recovery Time (trr): 195ns
    • Power - Max: 69W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 5A, 60Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
    • Current - Collector Pulsed (Icm): 15A
    • Switching Energy: 80µJ (on), 70µJ (off)
    • Gate Charge: 14nC
    • Td (on/off) @ 25°C: 8.5ns/106ns
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  • IGBT 650V 5A TO252
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Series: Alpha IGBT™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252 (DPAK)
    • Reverse Recovery Time (trr): 170ns
    • Power - Max: 52W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 5A, 60Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
    • Current - Collector Pulsed (Icm): 15A
    • Switching Energy: 81µJ (on), 49µJ (off)
    • Gate Charge: 9.2nC
    • Td (on/off) @ 25°C: 8ns/73ns
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  • IGBT 3 CHIP 600V WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 10A, 25Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
    • Current - Collector Pulsed (Icm): 30A
    • Td (on/off) @ 25°C: 28ns/198ns
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  • IGBT 600V 10A 50W TO220
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Series: PowerMESH™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Reverse Recovery Time (trr): 45ns
    • Power - Max: 50W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 480V, 3A, 10Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
    • Current - Collector Pulsed (Icm): 24A
    • Switching Energy: 33µJ (off)
    • Gate Charge: 21nC
    • Td (on/off) @ 25°C: 5ns/53ns
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  • N CHANNEL IGBT FOR SWITCHING APP
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 400V
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  • IGBT 1500V 10A 62.5W TO3PF
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-3P-3 Full Pack
    • Supplier Device Package: TO-3PF
    • Power - Max: 62.5W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 1500V
    • Test Condition: 600V, 5A, 10Ohm, 10V
    • Vce(on) (Max) @ Vge, Ic: 5.5V @ 10V, 5A
    • Current - Collector Pulsed (Icm): 20A
    • Switching Energy: 190µJ (on), 100µJ (off)
    • Gate Charge: 30nC
    • Td (on/off) @ 25°C: 10ns/30ns
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  • N-CHANNEL IGBT FOR SWITCHING APP
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Package / Case: TO-218-3 Isolated Tab, TO-218AC
    • Supplier Device Package: TO-218 Isolated
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 500V
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