• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
Found: 46889
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Power - Output
Mounting Type
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Technology
Operating Temperature
FET Type
Gain
Noise Figure
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Voltage - Test
Current - Test
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
BLF988,112 RF FET LDMOS 110V 20.8DB SOT539A Ampleon USA Inc. SOT539A 250W 860MHz 110V SOT-539A LDMOS (Dual), Common Source 20.8dB 50V 1.3A
BLF6G27L-40P,118 RF FET LDMOS 65V 17DB SOT1121A Ampleon USA Inc. LDMOST 12W 2.5GHz ~ 2.7GHz 65V SOT-1121A LDMOS (Dual), Common Source 17.5dB 28V 450mA
IPB039N04LGATMA1 MOSFET N-CH 40V 80A TO263-3 Infineon Technologies D²PAK (TO-263AB) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 94W (Tc) 40V 80A (Tc) 3.9mOhm @ 80A, 10V 4.5V, 10V 2V @ 45µA 78nC @ 10V 6100pF @ 25V ±20V OptiMOS™
IRF6722MTR1PBF MOSFET N-CH 30V 13A DIRECTFET Infineon Technologies DIRECTFET™ MP Surface Mount DirectFET™ Isometric MP MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) N-Channel 2.3W (Ta), 42W (Tc) 30V 13A (Ta), 56A (Tc) 7.7mOhm @ 13A, 10V 4.5V, 10V 2.4V @ 50µA 17nC @ 4.5V 1300pF @ 15V ±20V HEXFET®
AUIRLSL3036 MOSFET N-CH 60V 270A TO262 Infineon Technologies TO-262 Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 380W (Tc) 60V 195A (Tc) 2.4mOhm @ 165A, 10V 4.5V, 10V 2.5V @ 250µA 140nC @ 4.5V 11210pF @ 50V ±16V HEXFET®
IRLL2703TR MOSFET N-CH 30V 3.9A SOT223 Infineon Technologies SOT-223 Surface Mount TO-261-4, TO-261AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1W (Ta) 30V 3.9A (Ta) 45mOhm @ 3.9A, 10V 4V, 10V 2.4V @ 250µA 14nC @ 5V 530pF @ 25V ±16V HEXFET®
TAV-541+ RF MOSFET E-PHEMT 3V FG873 Mini-Circuits FG873 21.1dB 450MHz ~ 6GHz 5V 4-SMD, No Lead E-pHEMT 23.8dB 1.8dB @ 5.8GHz 3V 60mA
BUK7K25-40E,115 MOSFET 2N-CH 40V 27A LFPAK56D Nexperia USA Inc. LFPAK56D 32W Surface Mount SOT-1205, 8-LFPAK56 -55°C ~ 175°C (TJ) 2 N-Channel (Dual) 40V 27A Standard 25mOhm @ 5A, 10V 4V @ 1mA 7.9nC @ 10V 525pF @ 25V Automotive, AEC-Q101, TrenchMOS™
HUF75333P3 MOSFET N-CH 55V 60A TO-220AB onsemi TO-220-3 Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 150W (Tc) 55V 66A (Tc) 16mOhm @ 66A, 10V 10V 4V @ 250µA 85nC @ 20V 1300pF @ 25V ±20V UltraFET™
NTHD5902T1 MOSFET 2N-CH 30V 2.9A CHIPFET onsemi ChipFET™ 1.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 30V 2.9A Logic Level Gate 85mOhm @ 2.9A, 10V 1V @ 250µA 7.5nC @ 10V
NTMYS011N04CTWG FET 40V 35A onsemi 4-LFPAK Surface Mount SOT-1023, 4-LFPAK MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 3.8W (Ta), 28W (Tc) 40V 13A (Ta), 35A (Tc) 12mOhm @ 10A, 10V 10V 3.5V @ 20µA 7.9nC @ 10V 420pF @ 25V ±20V
HUF76121S3 N-CHANNEL POWER MOSFET Rochester Electronics, LLC
FKI06108 MOSFET N-CH 60V 39A TO-220F Sanken TO-220F Through Hole TO-220-3 Full Pack MOSFET (Metal Oxide) 150°C (TJ) N-Channel 38W (Tc) 60V 39A (Tc) 8.8mOhm @ 28.5A, 10V 4.5V, 10V 2.5V @ 650µA 38.6nC @ 10V 2520pF @ 25V ±20V
SI8900EDB-T2-E1 MOSFET 2N-CH 20V 5.4A 10-MFP Vishay Siliconix 10-Micro Foot™ CSP (2x5) 1W Surface Mount 10-UFBGA, CSPBGA -55°C ~ 150°C (TJ) 2 N-Channel (Dual) Common Drain 20V 5.4A Logic Level Gate 1V @ 1.1mA TrenchFET®
PXFE211507FC-V1-R0 150W, SI LDMOS, 28V, 2110-2170MH Wolfspeed, Inc. H-37248G-4/2 170W 2.11GHz ~ 2.17GHz 65V 10µA H-37248G-4/2 LDMOS 18dB 28V 900mA