- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
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Supplier Device Package
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Power - Max
|
Power - Output
|
Mounting Type
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Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Technology
|
Operating Temperature
|
FET Type
|
Gain
|
Noise Figure
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Voltage - Test
|
Current - Test
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
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BLF988,112 | RF FET LDMOS 110V 20.8DB SOT539A | Ampleon USA Inc. | SOT539A | 250W | 860MHz | 110V | SOT-539A | LDMOS (Dual), Common Source | 20.8dB | 50V | 1.3A | ||||||||||||||||||
BLF6G27L-40P,118 | RF FET LDMOS 65V 17DB SOT1121A | Ampleon USA Inc. | LDMOST | 12W | 2.5GHz ~ 2.7GHz | 65V | SOT-1121A | LDMOS (Dual), Common Source | 17.5dB | 28V | 450mA | ||||||||||||||||||
IPB039N04LGATMA1 | MOSFET N-CH 40V 80A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 94W (Tc) | 40V | 80A (Tc) | 3.9mOhm @ 80A, 10V | 4.5V, 10V | 2V @ 45µA | 78nC @ 10V | 6100pF @ 25V | ±20V | OptiMOS™ | |||||||||||
IRF6722MTR1PBF | MOSFET N-CH 30V 13A DIRECTFET | Infineon Technologies | DIRECTFET™ MP | Surface Mount | DirectFET™ Isometric MP | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 2.3W (Ta), 42W (Tc) | 30V | 13A (Ta), 56A (Tc) | 7.7mOhm @ 13A, 10V | 4.5V, 10V | 2.4V @ 50µA | 17nC @ 4.5V | 1300pF @ 15V | ±20V | HEXFET® | |||||||||||
AUIRLSL3036 | MOSFET N-CH 60V 270A TO262 | Infineon Technologies | TO-262 | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 380W (Tc) | 60V | 195A (Tc) | 2.4mOhm @ 165A, 10V | 4.5V, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | ±16V | HEXFET® | |||||||||||
IRLL2703TR | MOSFET N-CH 30V 3.9A SOT223 | Infineon Technologies | SOT-223 | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Ta) | 30V | 3.9A (Ta) | 45mOhm @ 3.9A, 10V | 4V, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | ±16V | HEXFET® | |||||||||||
TAV-541+ | RF MOSFET E-PHEMT 3V FG873 | Mini-Circuits | FG873 | 21.1dB | 450MHz ~ 6GHz | 5V | 4-SMD, No Lead | E-pHEMT | 23.8dB | 1.8dB @ 5.8GHz | 3V | 60mA | |||||||||||||||||
BUK7K25-40E,115 | MOSFET 2N-CH 40V 27A LFPAK56D | Nexperia USA Inc. | LFPAK56D | 32W | Surface Mount | SOT-1205, 8-LFPAK56 | -55°C ~ 175°C (TJ) | 2 N-Channel (Dual) | 40V | 27A | Standard | 25mOhm @ 5A, 10V | 4V @ 1mA | 7.9nC @ 10V | 525pF @ 25V | Automotive, AEC-Q101, TrenchMOS™ | |||||||||||||
HUF75333P3 | MOSFET N-CH 55V 60A TO-220AB | onsemi | TO-220-3 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 150W (Tc) | 55V | 66A (Tc) | 16mOhm @ 66A, 10V | 10V | 4V @ 250µA | 85nC @ 20V | 1300pF @ 25V | ±20V | UltraFET™ | |||||||||||
NTHD5902T1 | MOSFET 2N-CH 30V 2.9A CHIPFET | onsemi | ChipFET™ | 1.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 2.9A | Logic Level Gate | 85mOhm @ 2.9A, 10V | 1V @ 250µA | 7.5nC @ 10V | |||||||||||||||
NTMYS011N04CTWG | FET 40V 35A | onsemi | 4-LFPAK | Surface Mount | SOT-1023, 4-LFPAK | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 28W (Tc) | 40V | 13A (Ta), 35A (Tc) | 12mOhm @ 10A, 10V | 10V | 3.5V @ 20µA | 7.9nC @ 10V | 420pF @ 25V | ±20V | ||||||||||||
HUF76121S3 | N-CHANNEL POWER MOSFET | Rochester Electronics, LLC | |||||||||||||||||||||||||||
FKI06108 | MOSFET N-CH 60V 39A TO-220F | Sanken | TO-220F | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 150°C (TJ) | N-Channel | 38W (Tc) | 60V | 39A (Tc) | 8.8mOhm @ 28.5A, 10V | 4.5V, 10V | 2.5V @ 650µA | 38.6nC @ 10V | 2520pF @ 25V | ±20V | ||||||||||||
SI8900EDB-T2-E1 | MOSFET 2N-CH 20V 5.4A 10-MFP | Vishay Siliconix | 10-Micro Foot™ CSP (2x5) | 1W | Surface Mount | 10-UFBGA, CSPBGA | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) Common Drain | 20V | 5.4A | Logic Level Gate | 1V @ 1.1mA | TrenchFET® | ||||||||||||||||
PXFE211507FC-V1-R0 | 150W, SI LDMOS, 28V, 2110-2170MH | Wolfspeed, Inc. | H-37248G-4/2 | 170W | 2.11GHz ~ 2.17GHz | 65V | 10µA | H-37248G-4/2 | LDMOS | 18dB | 28V | 900mA |
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