- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Power - Output
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Technology
|
Operating Temperature
|
FET Type
|
Gain
|
Noise Figure
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Voltage - Test
|
Current - Test
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPP50R299CPHKSA1 | MOSFET N-CH 550V TO220-3 | Infineon Technologies | PG-TO220-3-1 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 104W (Tc) | 550V | 12A (Tc) | 299mOhm @ 6.6A, 10V | 10V | 3.5V @ 440µA | 31nC @ 10V | 1190pF @ 100V | ±20V | CoolMOS™ | |||||||||||
| IXTP3N100P | MOSFET N-CH 1000V 3A TO-220 | IXYS | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 125W (Tc) | 1000V | 3A (Tc) | 4.8Ohm @ 1.5A, 10V | 10V | 4.5V @ 250µA | 39nC @ 10V | 1100pF @ 25V | ±20V | PolarVHV™ | |||||||||||
| BUK953R2-40E,127 | MOSFET N-CH 40V 100A TO220AB | NXP USA Inc. | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 234W (Tc) | 40V | 100A (Tc) | 2.8mOhm @ 25A, 10V | 5V, 10V | 2.1V @ 1mA | 69.5nC @ 5V | 9150pF @ 25V | ±10V | TrenchMOS™ | |||||||||||
| NTD4858NA-1G | MOSFET N-CH 25V 11.2A IPAK | onsemi | I-PAK | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 1.3W (Ta), 54.5W (Tc) | 25V | 11.2A (Ta), 73A (Tc) | 6.2mOhm @ 30A, 10V | 2.5V @ 250µA | 19.2nC @ 4.5V | 1563pF @ 12V | ||||||||||||||
| NVMFS5C460NLT3G | MOSFET N-CH 40V SO8FL | onsemi | 5-DFN (5x6) (8-SOFL) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.6W (Ta), 50W (Tc) | 40V | 4.5mOhm @ 35A, 10V | 4.5V, 10V | 2V @ 250µA | 23nC @ 10V | 1300pF @ 25V | ±20V | |||||||||||||
| FDS4070N3 | MOSFET N-CH 40V 15.3A 8-SOIC | onsemi | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3W (Ta) | 40V | 15.3A (Ta) | 7.5mOhm @ 15.3A, 10V | 10V | 5V @ 250µA | 67nC @ 10V | 2819pF @ 20V | ±20V | PowerTrench® | |||||||||||
| HAT2173HWS-E | MOSFET N-CH LFPAK-5 | Renesas Electronics America | 5-LFPAK | Surface Mount | SC-100, SOT-669 | MOSFET (Metal Oxide) | 150°C | N-Channel | 30W (Tc) | 100V | 25A (Ta) | 15mOhm @ 12.5A, 10V | 8V, 10V | 6V @ 20mA | 61nC @ 10V | 4350pF @ 10V | ±20V | ||||||||||||
| BUK7E1R6-30E,127 | BUK7E1R6-30E - POWER, I2PAK | Rochester Electronics, LLC | I2PAK | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 349W (Tc) | 30V | 120A (Tc) | 1.6mOhm @ 25A, 10V | 10V | 4V @ 1mA | 154nC @ 10V | 11.96pF @ 25V | ±20V | TrenchMOS™ | |||||||||||
| NTD24N06L-1G | N-CHANNEL POWER MOSFET | Rochester Electronics, LLC | I-PAK | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 1.36W (Ta), 62.5W (Tj) | 60V | 24A (Ta) | 45mOhm @ 10A, 5V | 5V | 2V @ 250µA | 32nC @ 5V | 1.14pF @ 25V | ±15V | ||||||||||||
| STL180N6F7 | N-CHANNEL 60 V, 1.9 MOHM TYP., 1 | STMicroelectronics | PowerFlat™ (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 4.8W (Ta), 166W (Tc) | 60V | 32A (Ta), 120A (Tc) | 2.4mOhm @ 16A, 10V | 10V | 4V @ 250µA | 79.5nC @ 10V | 4825pF @ 25V | ±20V | STripFET™ F7 | |||||||||||
| XP162A11C0PR-G | MOSFET P-CH 30V 2.5A SOT89 | Torex Semiconductor Ltd | SOT-89 | Surface Mount | TO-243AA | MOSFET (Metal Oxide) | 150°C (TJ) | P-Channel | 2W (Ta) | 30V | 2.5A (Ta) | 150mOhm @ 1.5A, 10V | 4.5V, 10V | 280pF @ 10V | ±20V | ||||||||||||||
| TK22E10N1,S1X | MOSFET N CH 100V 52A TO220 | Toshiba Semiconductor and Storage | TO-220 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | 150°C (TJ) | N-Channel | 72W (Tc) | 100V | 52A (Tc) | 13.8mOhm @ 11A, 10V | 10V | 4V @ 300µA | 28nC @ 10V | 1800pF @ 50V | ±20V | U-MOSVIII-H | |||||||||||
| SSM6J503NU,LF | MOSFET P CH 20V 6A 2-2AA1A | Toshiba Semiconductor and Storage | 6-UDFNB (2x2) | Surface Mount | 6-WDFN Exposed Pad | MOSFET (Metal Oxide) | 150°C (TJ) | P-Channel | 1W (Ta) | 20V | 6A (Ta) | 32.4mOhm @ 3A, 4.5V | 1.5V, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | ±8V | U-MOSVI | |||||||||||
| SI4128DY-T1-GE3 | MOSFET N-CH 30V 10.9A 8-SOIC | Vishay Siliconix | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.4W (Ta), 5W (Tc) | 30V | 10.9A (Ta) | 24mOhm @ 7.8A, 10V | 4.5V, 10V | 2.5V @ 250µA | 12nC @ 10V | 435pF @ 15V | ±20V | TrenchFET® | |||||||||||
| PXAC261212FC-V1-R250 | IC AMP RF LDMOS | Wolfspeed, Inc. | H-37248-4 | 28W | 2.69GHz | 65V | H-37248-4 | LDMOS | 15dB | 28V | 280mA |
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