- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Power - Output
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Technology
|
Operating Temperature
|
FET Type
|
Gain
|
Noise Figure
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Voltage - Test
|
Current - Test
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AOTF4126 | MOSFET N-CH 100V 6A TO220F | Alpha & Omega Semiconductor Inc. | TO-220-3F | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 2.1W (Ta), 42W (Tc) | 100V | 6A (Ta), 27A (Tc) | 24mOhm @ 20A, 10V | 7V, 10V | 4V @ 250µA | 42nC @ 10V | 2200pF @ 50V | ±25V | SDMOS™ | |||||||||||
| IRF7494TR | MOSFET N-CH 150V 5.2A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | N-Channel | 150V | 5.2A (Ta) | 44mOhm @ 3.1A, 10V | 4V @ 250µA | 54nC @ 10V | 1750pF @ 25V | HEXFET® | |||||||||||||||
| IRF6720S2TRPBF | MOSFET N-CH 30V 11A DIRECTFET-S1 | Infineon Technologies | DIRECTFET S1 | Surface Mount | DirectFET™ Isometric S1 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 1.7W (Ta), 17W (Tc) | 30V | 11A (Ta), 35A (Tc) | 8mOhm @ 11A, 10V | 4.5V, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1140pF @ 15V | ±20V | HEXFET® | |||||||||||
| APT56M60B2 | MOSFET N-CH 600V 56A T-MAX | Microsemi Corporation | TO-247 [B] | Through Hole | TO-247-3 Variant | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1040W (Tc) | 600V | 60A (Tc) | 130mOhm @ 28A, 10V | 10V | 5V @ 2.5mA | 280nC @ 10V | 11300pF @ 25V | ±30V | POWER MOS 8™ | |||||||||||
| APT130SM70B | MOSFET N-CH 700V TO247 | Microsemi Corporation | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | N-Channel | 556W (Tc) | 700V | 110A (Tc) | 45mOhm @ 60A, 20V | 20V | 2.4V @ 1mA | 220nC @ 20V | 3950pF @ 700V | +25V, -10V | ||||||||||||
| PMV170UN,215 | MOSFET N-CH 20V 1A TO-236AB | NXP USA Inc. | TO-236AB (SOT23) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 325mW (Ta), 1.14W (Tc) | 20V | 1A (Ta) | 165mOhm @ 1A, 4.5V | 1.8V, 4.5V | 1V @ 250µA | 1.65nC @ 4.5V | 83pF @ 10V | ±8V | ||||||||||||
| FDWS9508L-F085 | PMOS PWR56 40V 4.9 MOHM | onsemi | 8-PQFN (5x6) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 214W (Tj) | 40V | 80A (Tc) | 4.9mOhm @ 80A, 10V | 4.5V, 10V | 3V @ 250µA | 107nC @ 10V | 4840pF @ 20V | ±16V | Automotive, AEC-Q101, PowerTrench® | |||||||||||
| FDC697P_F077 | MOSFET P-CH 20V 8A SSOT-6 | onsemi | SuperSOT™-6 FLMP | Surface Mount | 6-SSOT Flat-lead, SuperSOT™-6 FLMP | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2W (Ta) | 20V | 8A (Ta) | 20mOhm @ 8A, 4.5V | 1.8V, 4.5V | 1.5V @ 250µA | 55nC @ 4.5V | 3524pF @ 10V | ±8V | PowerTrench® | |||||||||||
| NTQD4154ZR2 | MOSFET 2N-CH 20V 7.5A 8-TSSOP | onsemi | 8-TSSOP | 1.52W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 7.5A | Logic Level Gate | 19mOhm @ 7.5A, 4.5V | 1.5V @ 250µA | 21.5nC @ 4.5V | 1485pF @ 16V | ||||||||||||||
| FQPF7N65C | MOSFET N-CH 650V 7A TO-220F | onsemi | TO-220F | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 52W (Tc) | 650V | 7A (Tc) | 1.4Ohm @ 3.5A, 10V | 10V | 4V @ 250µA | 36nC @ 10V | 1245pF @ 25V | ±30V | QFET® | |||||||||||
| FQPF4N25 | MOSFET N-CH 250V 2.8A TO-220F | onsemi | TO-220F | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 32W (Tc) | 250V | 2.8A (Tc) | 1.75Ohm @ 1.4A, 10V | 10V | 5V @ 250µA | 5.6nC @ 10V | 200pF @ 25V | ±30V | QFET® | |||||||||||
| 3SK318YB-TL-E | TRANS N-CH CMPAK-4 | Renesas Electronics America Inc | CMPAK-4 | 6V | SC-82A, SOT-343 | N-Channel Dual Gate | 21dB | 1.4dB | 3.5V | 10mA | |||||||||||||||||||
| NTD5862N-1G | N-CHANNEL POWER MOSFET | Rochester Electronics, LLC | DPAK | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 115W (Tc) | 60V | 98A (Tc) | 5.7mOhm @ 45A, 10V | 10V | 4V @ 250µA | 82nC @ 10V | 6pF @ 25V | ±20V | ||||||||||||
| STW69N65M5 | MOSFET N-CH 650V 58A TO-247 | STMicroelectronics | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | 150°C (TJ) | N-Channel | 330W (Tc) | 650V | 58A (Tc) | 45mOhm @ 29A, 10V | 10V | 5V @ 250µA | 143nC @ 10V | 6420pF @ 100V | ±25V | MDmesh™ V | |||||||||||
| SI3457BDV-T1-GE3 | MOSFET P-CH 30V 3.7A 6-TSOP | Vishay Siliconix | 6-TSOP | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 1.14W (Ta) | 30V | 3.7A (Ta) | 54mOhm @ 5A, 10V | 4.5V, 10V | 3V @ 250µA | 19nC @ 10V | ±20V | TrenchFET® |
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