- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Power - Output
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Technology
|
Operating Temperature
|
FET Type
|
Gain
|
Noise Figure
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Voltage - Test
|
Current - Test
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BLC9G20LS-470AVTZ | RF FET LDMOS 65V 15.7DB SOT12583 | Ampleon USA Inc. | DFM6 | 470W | 1.81GHz ~ 1.88GHz | 65V | SOT-1258-3 | LDMOS (Dual), Common Source | 15.7dB | 28V | 400mA | ||||||||||||||||||
| IPB80N04S403ATMA1 | MOSFET N-CH 40V 80A TO263-3-2 | Infineon Technologies | PG-TO263-3-2 | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 94W (Tc) | 40V | 80A (Tc) | 3.3mOhm @ 80A, 10V | 10V | 4V @ 53µA | 66nC @ 10V | 5260pF @ 25V | ±20V | OptiMOS™ | |||||||||||
| SPN02N60S5 | MOSFET N-CH 600V 0.4A SOT-223 | Infineon Technologies | PG-SOT223-4 | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.8W (Ta) | 600V | 400mA (Ta) | 3Ohm @ 1.1A, 10V | 10V | 5.5V @ 80µA | 7.4nC @ 10V | 250pF @ 25V | ±20V | CoolMOS™ | |||||||||||
| IRL1404ZSPBF | MOSFET N-CH 40V 75A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 230W (Tc) | 40V | 75A (Tc) | 3.1mOhm @ 75A, 10V | 4.5V, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | ±16V | HEXFET® | |||||||||||
| IXTH12N100 | MOSFET N-CH 1000V 12A TO-247 | IXYS | TO-247 (IXTH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 1000V | 12A (Tc) | 1.05Ohm @ 6A, 10V | 10V | 4.5V @ 250µA | 170nC @ 10V | 4000pF @ 25V | ±20V | MegaMOS™ | |||||||||||
| VRF154FL | MOSFET RF PWR N-CH 50V 600W T2 | Microchip Technology | T2 | 600W | 80MHz | 170V | 4mA | T2 | N-Channel | 17dB | 50V | 800mA | |||||||||||||||||
| JANTXV2N6760 | MOSFET N-CH | Microsemi Corporation | TO-204AA (TO-3) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 4W (Ta), 75W (Tc) | 400V | 5.5A (Tc) | 1.22Ohm @ 5.5A, 10V | 10V | 4V @ 250µA | 39nC @ 10V | ±20V | Military, MIL-PRF-19500/542 | ||||||||||||
| PHP78NQ03LT,127 | MOSFET N-CH 25V 75A TO220AB | NXP USA Inc. | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 93W (Tc) | 25V | 75A (Tc) | 9mOhm @ 25A, 10V | 5V, 10V | 2V @ 1mA | 13nC @ 5V | 1074pF @ 25V | ±20V | TrenchMOS™ | |||||||||||
| NDS355AN_G | MOSFET N-CH 30V 1.7A SSOT3 | onsemi | SuperSOT-3 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 500mW (Ta) | 30V | 1.7A (Ta) | 85mOhm @ 1.9A, 10V | 4.5V, 10V | 2V @ 250µA | 5nC @ 5V | 195pF @ 15V | ±20V | ||||||||||||
| NVGS4141NT1G | MOSFET N-CH 30V 3.5A 6TSOP | onsemi | 6-TSOP | Surface Mount | SOT-23-6 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 500mW (Ta) | 30V | 3.5A (Ta) | 25mOhm @ 7A, 10V | 4.5V, 10V | 3V @ 250µA | 12nC @ 10V | 560pF @ 24V | ±20V | ||||||||||||
| UPA503T-T1-A | SMALL SIGNAL P-CHANNEL MOSFET | Renesas Electronics America Inc | SC-59-5, Mini Mold | 300mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2 P-Channel (Dual) | 50V | 100mA | Standard | 60Ohm @ 10mA, 10V | 2.5V @ 1µA | 17pF @ 5V | ||||||||||||||||
| IPW65R190E6FKSA1 | N-CHANNEL POWER MOSFET | Rochester Electronics, LLC | PG-TO247-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 151W (Tc) | 650V | 20.2A (Tc) | 190mOhm @ 7.3A, 10V | 10V | 3.5V @ 730µA | 73nC @ 10V | 1.62pF @ 100V | ±20V | CoolMOS™ | |||||||||||
| SI4634DY-T1-E3 | MOSFET N-CH 30V 24.5A 8-SOIC | Vishay Siliconix | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta), 5.7W (Tc) | 30V | 24.5A (Tc) | 5.2mOhm @ 15A, 10V | 4.5V, 10V | 2.6V @ 250µA | 68nC @ 10V | 3150pF @ 15V | ±20V | TrenchFET® | |||||||||||
| IRF9640STRRPBF | MOSFET P-CH 200V 11A D2PAK | Vishay Siliconix | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 125W (Tc) | 200V | 11A (Tc) | 500mOhm @ 6.6A, 10V | 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | ±20V | ||||||||||||
| IRFD214 | MOSFET N-CH 250V 450MA 4-DIP | Vishay Siliconix | 4-DIP, Hexdip, HVMDIP | Through Hole | 4-DIP (0.300", 7.62mm) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Ta) | 250V | 450mA (Ta) | 2Ohm @ 270mA, 10V | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V |
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