- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Power - Output
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Technology
|
Operating Temperature
|
FET Type
|
Gain
|
Noise Figure
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Voltage - Test
|
Current - Test
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AOD2606 | MOSFET N-CH 60V 46A TO252 | Alpha & Omega Semiconductor Inc. | TO-252, (D-Pak) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 2.5W (Ta), 150W (Tc) | 60V | 14A (Ta), 46A (Tc) | 6.8mOhm @ 20A, 10V | 10V | 3.5V @ 250µA | 75nC @ 10V | 4050pF @ 30V | ±20V | ||||||||||||
| CE3512K2 | RF FET 4V 12GHZ 4MICROX | CEL | 4-Micro-X | 125mW | 12GHz | 4V | 15mA | 4-Micro-X | pHEMT FET | 13.7dB | 0.5dB | 2V | 10mA | ||||||||||||||||
| PTVA092407NF-V1-R5 | IC RF LDMOS FET 4HBSOF | Cree/Wolfspeed | PG-HBSOF-4-1 | 240W | 869MHz ~ 960MHz | 105V | 10µA | HBSOF-4-1 | LDMOS | 22.5dB | 48V | 900mA | |||||||||||||||||
| BUZ73HXKSA1 | MOSFET N-CH 200V 7A TO220-3 | Infineon Technologies | PG-TO220-3 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 40W (Tc) | 200V | 7A (Tc) | 400mOhm @ 4.5A, 10V | 10V | 4V @ 1mA | 530pF @ 25V | ±20V | SIPMOS® | ||||||||||||
| IRL3303D1STRL | MOSFET N-CH 30V 38A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 68W (Tc) | 30V | 38A (Tc) | 26mOhm @ 20A, 10V | 4.5V, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | ±16V | HEXFET® | |||||||||||
| IXTX3N250L | MOSFET DISCRETE TO-247P | IXYS | PLUS247™-3 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 417W (Tc) | 2500V | 3A (Tc) | 10Ohm @ 1.5A, 10V | 10V | 5V @ 1mA | 230nC @ 10V | 5400pF @ 25V | ±20V | ||||||||||||
| BSS123-TP | N-CHANNELMOSFETSOT-23 | Micro Commercial Co | SOT-23 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 350mW | 100V | 170mA | 6Ohm @ 170mA, 10V | 4.5V, 10V | 2.8V @ 250µA | 2nC @ 10V | 60pF @ 25V | ±20V | ||||||||||||
| NTE2382 | MOSFET-PWR N-CH HI SPEED | NTE Electronics, Inc | |||||||||||||||||||||||||||
| IRF620B_FP001 | MOSFET N-CH 200V 5A TO-220 | onsemi | TO-220-3 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 47W (Tc) | 200V | 5A (Tc) | 800mOhm @ 2.5A, 10V | 10V | 4V @ 250µA | 16nC @ 10V | 390pF @ 25V | ±30V | ||||||||||||
| FCP4N60 | MOSFET N-CH 600V 3.9A TO-220 | onsemi | TO-220-3 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 50W (Tc) | 600V | 3.9A (Tc) | 1.2Ohm @ 2A, 10V | 10V | 5V @ 250µA | 16.6nC @ 10V | 540pF @ 25V | ±30V | SuperFET™ | |||||||||||
| FQAF11N90 | N-CHANNEL POWER MOSFET | Rochester Electronics, LLC | TO-3PF | Through Hole | TO-3P-3 Full Pack | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 120W (Tc) | 900V | 7.2A (Tc) | 960mOhm @ 3.6A, 10V | 10V | 5V @ 250µA | 94nC @ 10V | 3.5pF @ 25V | ±30V | QFET® | |||||||||||
| 2SJ328-Z-AZ | P-CHANNEL POWER MOSFET | Rochester Electronics, LLC | |||||||||||||||||||||||||||
| RF4C100BCTCR | PCH -20V -10A MIDDLE POWER MOSFE | Rohm Semiconductor | HUML2020L8 | Surface Mount | 8-PowerUDFN | MOSFET (Metal Oxide) | 150°C (TJ) | P-Channel | 2W (Ta) | 20V | 10A (Ta) | 15.6mOhm @ 10A, 4.5V | 1.8V, 4.5V | 1.2V @ 1mA | 23.5nC @ 4.5V | 1660pF @ 10V | ±8V | ||||||||||||
| IRLZ24STRR | MOSFET N-CH 60V 17A D2PAK | Vishay Siliconix | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.7W (Ta), 60W (Tc) | 60V | 17A (Tc) | 100mOhm @ 10A, 5V | 4V, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | ±10V | ||||||||||||
| SI2303BDS-T1-E3 | MOSFET P-CH 30V 1.49A SOT23-3 | Vishay Siliconix | SOT-23-3 (TO-236) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 700mW (Ta) | 30V | 1.49A (Ta) | 200mOhm @ 1.7A, 10V | 4.5V, 10V | 3V @ 250µA | 10nC @ 10V | 180pF @ 15V | ±20V |
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