- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Power - Output
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Technology
|
Operating Temperature
|
FET Type
|
Gain
|
Noise Figure
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Voltage - Test
|
Current - Test
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NE4210S01-T1B | HJ-FET 13DB S01 | CEL | SMD | 12GHz | 4V | 15mA | 4-SMD | HFET | 13dB | 0.5dB | 2V | 10mA | |||||||||||||||||
| BSS8402DW-7-F | MOSFET N/P-CH 60V/50V SC70-6 | Diodes Incorporated | SOT-363 | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | -55°C ~ 150°C (TJ) | N and P-Channel | 60V, 50V | 115mA, 130mA | Logic Level Gate | 7.5Ohm @ 50mA, 5V | 2.5V @ 250µA | 50pF @ 25V | |||||||||||||||
| IRF9520NSPBF | MOSFET P-CH 100V 6.8A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 3.8W (Ta), 48W (Tc) | 100V | 6.8A (Tc) | 480mOhm @ 4A, 10V | 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | ±20V | HEXFET® | |||||||||||
| SPP42N03S2L-13 | MOSFET N-CH 30V 42A TO-220AB | Infineon Technologies | PG-TO220-3-1 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 83W (Tc) | 30V | 42A (Tc) | 12.9mOhm @ 21A, 10V | 4.5V, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | ±20V | OptiMOS™ | |||||||||||
| MSC015SMA070S | GEN2 SIC MOSFET 700V 15MOHM D3PA | Microchip Technology | D3Pak | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | N-Channel | 700V | 166A | |||||||||||||||||||
| PMDPB70XPE,115 | MOSFET 2P-CH 20V 3A 6HUSON | Nexperia USA Inc. | 6-HUSON-EP (2x2) | 515mW | Surface Mount | 6-UDFN Exposed Pad | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 3A | Logic Level Gate | 79mOhm @ 2A, 4.5V | 1.25V @ 250µA | 7.5nC @ 4.5V | 600pF @ 10V | ||||||||||||||
| NTMFD6H852NLT1G | MOSFET N-CH 80V 8DFN | onsemi | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | 250mW (Ta) | Surface Mount | 8-PowerTDFN | -55°C ~ 175°C (TJ) | 2 N-Channel (Dual) | 80V | 295mA | 1.6Ohm @ 500mA, 10V | 2.5V @ 250µA | 5nC @ 4.5V | 26pF @ 20V | |||||||||||||||
| FDN5618P | MOSFET P-CH 60V 1.25A SSOT3 | onsemi | SuperSOT-3 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 500mW (Ta) | 60V | 1.25A (Ta) | 170mOhm @ 1.25A, 10V | 4.5V, 10V | 3V @ 250µA | 13.8nC @ 10V | 430pF @ 30V | ±20V | PowerTrench® | |||||||||||
| NTD14N03RT4G | MOSFET N-CH 25V 2.5A DPAK | onsemi | DPAK | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.04W (Ta), 20.8W (Tc) | 25V | 2.5A (Ta) | 95mOhm @ 5A, 10V | 4.5V, 10V | 2V @ 250µA | 1.8nC @ 5V | 115pF @ 20V | ±20V | ||||||||||||
| N0602N-S19-AY | MOSFET N-CH 60V 100A TO-220 | Renesas Electronics America | TO-220-3 | Through Hole | TO-220-3 Isolated Tab | MOSFET (Metal Oxide) | 150°C (TJ) | N-Channel | 1.5W (Ta), 156W (Tc) | 60V | 100A (Ta) | 4.6mOhm @ 50A, 10V | 10V | 133nC @ 10V | 7730pF @ 25V | ±20V | |||||||||||||
| 2SK3287ANTL-E | N-CHANNEL POWER MOSFET | Rochester Electronics, LLC | |||||||||||||||||||||||||||
| R6020ENZC17 | MOSFET N-CH 600V 20A TO3PF | Rohm Semiconductor | TO-3PF | Through Hole | TO-3P-3 Full Pack | MOSFET (Metal Oxide) | 150°C (TJ) | N-Channel | 120W (Tc) | 600V | 20A (Tc) | 196mOhm @ 9.5A, 10V | 10V | 4V @ 1mA | 60nC @ 10V | 1400pF @ 25V | ±20V | ||||||||||||
| TSM4ND65CI | 650V 4A SINGLE N-CHANNEL POWER M | Taiwan Semiconductor Corporation | ITO-220 | Through Hole | TO-220-3 Full Pack, Isolated Tab | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 41.6W (Tc) | 650V | 4A (Tc) | 2.6Ohm @ 1.2A, 10V | 10V | 3.8V @ 250µA | 16.8nC @ 10V | 596pF @ 50V | ±30V | ||||||||||||
| IRFU210 | MOSFET N-CH 200V 2.6A I-PAK | Vishay Siliconix | TO-251AA | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta), 25W (Tc) | 200V | 2.6A (Tc) | 1.5Ohm @ 1.6A, 10V | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | ||||||||||||
| SI7145DP-T1-GE3 | MOSFET P-CH 30V 60A PPAK SO-8 | Vishay Siliconix | PowerPAK® SO-8 | Surface Mount | PowerPAK® SO-8 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 6.25W (Ta), 104W (Tc) | 30V | 60A (Tc) | 2.6mOhm @ 25A, 10V | 4.5V, 10V | 2.3V @ 250µA | 413nC @ 10V | 15660pF @ 15V | ±20V | TrenchFET® |
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