• Manufacturer: Rohm Semiconductor
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-3PF
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 120W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
• Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Vishay Siliconix
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package: TO-251AA
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
• Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Renesas Electronics America
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-220-3 Isolated Tab
• Supplier Device Package: TO-220-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
• Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7730pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1.5W (Ta), 156W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 20V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Taiwan Semiconductor Corporation
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.2A, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 596pF @ 50V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 41.6W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±30V

• Manufacturer: Nexperia USA Inc.
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: 6-HUSON-EP (2x2)
• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3A
• Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V
• Vgs(th) (Max) @ Id: 1.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
• Power - Max: 515mW

• Manufacturer: onsemi
• Series: PowerTrench®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SuperSOT-3
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
• Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 30V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 500mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363
• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V, 50V
• Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
• Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Power - Max: 200mW

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
• FET Type: 2 N-Channel (Dual)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 295mA
• Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
• Power - Max: 250mW (Ta)

• Manufacturer: Infineon Technologies
• Series: OptiMOS™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3-1
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Rds On (Max) @ Id, Vgs: 12.9mOhm @ 21A, 10V
• Vgs(th) (Max) @ Id: 2V @ 37µA
• Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 83W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: D3Pak
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 166A
• Technology: SiCFET (Silicon Carbide)

• Manufacturer: CEL
• Package / Case: 4-SMD
• Supplier Device Package: SMD
• Frequency: 12GHz
• Voltage - Rated: 4V
• Current - Test: 10mA
• Transistor Type: HFET
• Gain: 13dB
• Voltage - Test: 2V
• Noise Figure: 0.5dB
• Current Rating (Amps): 15mA

• Manufacturer: Vishay Siliconix
• Series: TrenchFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: PowerPAK® SO-8
• Supplier Device Package: PowerPAK® SO-8
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 413nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 15660pF @ 15V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Rochester Electronics, LLC