• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 8
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Frequency
Voltage - Rated
Package / Case
Transistor Type
Gain
Voltage - Test
Current - Test
MRF5S19060NBR1 RF L BAND, N-CHANNEL , TO-272 Freescale Semiconductor TO-272 WB-4 12W 1.99GHz 65V TO-272BB LDMOS 14dB 28V 750mA
MRF6S19060NBR1 RF POWER N-CHANNEL, MOSFET Freescale Semiconductor TO-272 WB-4 12W 1.93GHz 68V TO-272BB LDMOS 16dB 28V 610mA
MRF5S19060MBR1 RF L BAND, N-CHANNEL , TO-270 Freescale Semiconductor TO-272 WB-4 12W 1.93GHz ~ 1.99GHz 65V TO-272BB LDMOS 14dB 28V 750mA
MRF6S19060NBR1 FET RF 68V 1.93GHZ TO272-4 NXP USA Inc. TO-272 WB-4 12W 1.93GHz 68V TO-272BB LDMOS 16dB 28V 610mA
MRF5S19060NBR1 FET RF 65V 1.99GHZ TO-272-4 NXP USA Inc. TO-272 WB-4 12W 1.99GHz 65V TO-272BB LDMOS 14dB 28V 750mA
MRF6S19060MBR1 FET RF 68V 1.93GHZ TO272-4 NXP USA Inc. TO-272 WB-4 12W 1.93GHz 68V TO-272-4 LDMOS 16dB 28V 610mA
MRF5S19060MBR1 FET RF 65V 1.99GHZ TO-272-4 NXP USA Inc. TO-272 WB-4 12W 1.93GHz ~ 1.99GHz 65V TO-272BB LDMOS 14dB 28V 750mA
MRF6S19060NBR1 RF POWER N-CHANNEL, MOSFET Rochester Electronics, LLC TO-272 WB-4 12W 1.93GHz 68V TO-272BB LDMOS 16dB 28V 610mA
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