-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PTF080101M V1 | IC FET RF LDMOS 10W TSSOP-10 | Infineon Technologies | PG-RFP-10 | 10W | 960MHz | 65V | 1µA | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) | LDMOS | 16dB | 28V | 180mA | GOLDMOS® |
PTF210101M V1 | IC FET RF LDMOS 10W TSSOP-10 | Infineon Technologies | PG-RFP-10 | 10W | 2.17GHz | 65V | 1µA | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) | LDMOS | 15dB | 28V | 180mA | GOLDMOS® |
PTF180101M V1 | IC FET RF LDMOS 10W TSSOP-10 | Infineon Technologies | PG-RFP-10 | 10W | 1.99GHz | 65V | 1µA | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) | LDMOS | 16.5dB | 28V | 180mA | GOLDMOS® |
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- 100