-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|
AFV09P350-04GNR3 | RF POWER FIELD-EFFECT TRANSISTOR | Freescale Semiconductor | OM-780G-4L | 100W | 920MHz | 105V | OM-780G-4L | LDMOS (Dual) | 19.5dB | 48V | 860mA |
AFV09P350-04GNR3 | RF MOSFET LDMOS DL 48V OM780G-4L | NXP USA Inc. | OM-780G-4L | 100W | 920MHz | 105V | OM-780G-4L | LDMOS (Dual) | 19.5dB | 48V | 860mA |
MMRF1020-04GNR3 | FET RF 2CH 105V 920MHZ OM780-4G | NXP USA Inc. | OM-780G-4L | 100W | 920MHz | 105V | OM-780G-4L | LDMOS (Dual) | 19.5dB | 48V | 860mA |
- 10
- 15
- 50
- 100