-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|
MRF6VP2600HR6 | FET RF 2CH 110V 225MHZ NI1230 | NXP USA Inc. | NI-1230 | 125W | 225MHz | 110V | NI-1230 | LDMOS (Dual) | 25dB | 50V | 2.6A |
MRFE6VP8600HR5 | FET RF 2CH 130V 860MHZ NI-1230 | NXP USA Inc. | NI-1230 | 125W | 860MHz | 130V | NI-1230 | LDMOS (Dual) | 19.3dB | 50V | 1.4A |
MRF6VP2600HR5 | FET RF 2CH 110V 225MHZ NI-1230 | NXP USA Inc. | NI-1230 | 125W | 225MHz | 110V | NI-1230 | LDMOS (Dual) | 25dB | 50V | 2.6A |
MRFE6VP8600HR6 | FET RF 2CH 130V 860MHZ NI1230H | NXP USA Inc. | NI-1230 | 125W | 860MHz | 130V | NI-1230 | LDMOS (Dual) | 19.3dB | 50V | 1.4A |
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- 50
- 100