-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|
MMRF1007HSR5 | FET RF 2CH 110V 1.03GHZ NI-1230S | NXP USA Inc. | NI-1230-4S | 1000W | 1.03GHz | 110V | NI-1230-4S | LDMOS (Dual) | 20dB | 50V | 150mA |
MMRF1312HSR5 | TRANS 960-1215MHZ 1000W PEAK 50V | NXP USA Inc. | NI-1230-4S | 1000W | 1.034GHz | 112V | NI-1230-4S | LDMOS (Dual) | 19.6dB | 50V | 100mA |
AFV141KHSR5 | IC TRANS RF LDMOS | NXP USA Inc. | NI-1230-4S | 1000W | 1.4GHz | 105V | NI-1230-4S | LDMOS (Dual) | 17.7dB | 50V | 100mA |
AFV121KHSR5 | IC TRANS RF LDMOS | NXP USA Inc. | NI-1230-4S | 1000W | 960MHz ~ 1.22GHz | 112V | NI-1230-4S | LDMOS (Dual) | 19.6dB | 50V | 100mA |
MMRF1314HSR5 | TRANS RF FET 1.4GHZ 1000W 52V | NXP USA Inc. | NI-1230-4S | 1000W | 1.4GHz | 105V | NI-1230-4S | LDMOS (Dual) | 17.7dB | 50V | 500mA |
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