-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|---|
CLF1G0035S-100PU | RF FET HEMT 150V 14DB SOT1228B | Ampleon USA Inc. | LDMOST | 100W | 3GHz | 150V | SOT-1228B | HEMT | 14dB | 50V | 100mA | |
BLF644PU | RF FET LDMOS 65V 23.5DB SOT1228A | Ampleon USA Inc. | LDMOST | 100W | 860MHz | 65V | SOT-1228A | LDMOS (Dual), Common Source | 23.5dB | 32V | 200mA | |
CLF1G0035-100PU | RF MOSFET HEMT 50V LDMOST | Ampleon USA Inc. | LDMOST | 100W | 3GHz | 150V | SOT-1228A | GaN HEMT | 14dB | 50V | 100mA | |
BLF645,112 | RF FET LDMOS 65V 16DB SOT540A | Ampleon USA Inc. | LDMOST | 100W | 1.3GHz | 65V | 32A | SOT-540A | LDMOS (Dual), Common Source | 16.5dB | 32V | 900mA |
BLF4G20-110B,112 | FET RF 65V 1.99GHZ SOT502A | NXP USA Inc. | LDMOST | 100W | 1.93GHz ~ 1.99GHz | 65V | 12A | SOT-502A | LDMOS | 13.5dB | 28V | 700mA |
CLF1G0035-100P | RF SMALL SIGNAL FIELD-EFFECT TRA | NXP USA Inc. | LDMOST | 100W | 3.5GHz | 150V | SOT-1228A | HEMT | 12.5dB | 50V | 330mA | |
CLF1G0035-100P | CLF1G0035-100 - 100W BROADBAND R | Rochester Electronics, LLC | LDMOST | 100W | 3.5GHz | 150V | SOT-1228A | HEMT | 12.5dB | 50V | 330mA |
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