-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PTF180101S V1 | FET RF 65V 1.99GHZ H-32259-2 | Infineon Technologies | H-32259-2 | 10W | 1.99GHz | 65V | 1µA | H-32259-2 | LDMOS | 19dB | 28V | 180mA | GOLDMOS® |
PTF240101S V1 | FET RF 65V 2.68GHZ H-32259-2 | Infineon Technologies | H-32259-2 | 10W | 2.68GHz | 65V | 1µA | H-32259-2 | LDMOS | 16dB | 28V | 180mA | GOLDMOS® |
PTF080101S V1 | FET RF 65V 960MHZ H-32259-2 | Infineon Technologies | H-32259-2 | 10W | 960MHz | 65V | 1µA | H-32259-2 | LDMOS | 18.5dB | 28V | 150mA | GOLDMOS® |
- 10
- 15
- 50
- 100