• Supplier Device Package
  • Manufacturer
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 5
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Gain
Voltage - Test
Current - Test
A2T27S007NT1 A2T27S007 - 400-2700 MHZ, 28.8 D NXP Semiconductors 16-DFN (4x6) 28.8dBm 400MHz ~ 2.7GHz 65V 10µA 16-VDFN Exposed Pad LDMOS 18.9dB 28V 60mA
MHT1108NT1 RF POWER LDMOS TRANSISTOR FOR CO NXP USA Inc. 16-DFN (4x6) 12.5W 2.45GHz 65V 10µA 16-VDFN Exposed Pad LDMOS 18.6dB 32V 110mA
A2T27S007NT1 AIRFAST RF POWER LDMOS TRANSISTO NXP USA Inc. 16-DFN (4x6) 28.8dBm 728MHz ~ 3.6GHz 28V 16-VDFN Exposed Pad LDMOS
AFM907NT1 RF MOSFET LDMOS 7.5V 10-DFN NXP USA Inc. 16-DFN (4x6) 8.4W 136MHz ~ 941MHz 30V 10µA 16-VDFN Exposed Pad LDMOS 10.8V 100mA
AFM906NT1 RF MOSFET LDMOS 10.8V 16DFN NXP USA Inc. 16-DFN (4x6) 6.8W 136MHz ~ 941MHz 30V 2µA 16-VDFN Exposed Pad LDMOS 10.8V 100mA
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