- Supplier Device Package
- Manufacturer
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Operating Temperature
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Vgs(th) (Max) @ Id
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SI8900EDB-T2-E1 | MOSFET 2N-CH 20V 5.4A 10-MFP | Vishay Siliconix | 10-Micro Foot™ CSP (2x5) | 1W | Surface Mount | 10-UFBGA, CSPBGA | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) Common Drain | 20V | 5.4A | Logic Level Gate | 1V @ 1.1mA | TrenchFET® |
- 10
- 15
- 50
- 100