- Power - Output
- Manufacturer
- Supplier Device Package
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|
MRF6S21050LR5 | FET RF 68V 2.16GHZ NI-400 | Freescale Semiconductor | NI-400 | 11.5W | 2.16GHz | 68V | NI-400 | LDMOS | 16dB | 28V | 450mA |
MRF6S21050LSR5 | FET RF 68V 2.16GHZ NI-400S | Freescale Semiconductor | NI-400S | 11.5W | 2.16GHz | 68V | NI-400S | LDMOS | 16dB | 28V | 450mA |
MRF6S21050LR3 | FET RF 68V 2.16GHZ NI-400 | NXP USA Inc. | NI-400 | 11.5W | 2.16GHz | 68V | NI-400 | LDMOS | 16dB | 28V | 450mA |
MRF6S21050LR5 | FET RF 68V 2.16GHZ NI-400 | NXP USA Inc. | NI-400 | 11.5W | 2.16GHz | 68V | NI-400 | LDMOS | 16dB | 28V | 450mA |
MRF6S21050LSR3 | FET RF 68V 2.16GHZ NI-400S | NXP USA Inc. | NI-400S | 11.5W | 2.16GHz | 68V | NI-400S | LDMOS | 16dB | 28V | 450mA |
MRF6S21050LSR5 | FET RF 68V 2.16GHZ NI-400S | NXP USA Inc. | NI-400S | 11.5W | 2.16GHz | 68V | NI-400S | LDMOS | 16dB | 28V | 450mA |
- 10
- 15
- 50
- 100