• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 3
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Mounting Type
Package / Case
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Series
SI4310BDY-T1-E3 MOSFET 2N-CH 30V 7.5A 14SOIC Vishay Siliconix 14-SOIC 1.14W, 1.47W Surface Mount 14-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 30V 7.5A, 9.8A Logic Level Gate 11mOhm @ 10A, 10V 3V @ 250µA 18nC @ 4.5V 2370pF @ 15V TrenchFET®
SI4340DY-T1-E3 MOSFET 2N-CH 20V 7.3A 14SO Vishay Siliconix 14-SOIC 1.14W, 1.43W Surface Mount 14-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 20V 7.3A, 9.9A Logic Level Gate 12mOhm @ 9.6A, 10V 2V @ 250µA 15nC @ 4.5V TrenchFET®
SI4340CDY-T1-E3 MOSFET 2N-CH 20V 14.1A 14-SOIC Vishay Siliconix 14-SOIC 3W, 5.4W Surface Mount 14-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 20V 14.1A, 20A Logic Level Gate 9.4mOhm @ 11.5A, 10V 3V @ 250µA 32nC @ 10V 1300pF @ 10V TrenchFET®
  • 10
  • 15
  • 50
  • 100