-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|---|
MRFE8VP8600HSR5 | BROADBAND RF POWER LDMOS TRANSIS | NXP USA Inc. | NI-1230-4S | 140W | 860MHz | 115V | 20µA | NI-1230-4S | LDMOS | 21dB | 50V | 1.4A |
BLF2425M7LS140,112 | RF PFET, 1-ELEMENT, S BAND, SILI | NXP USA Inc. | SOT502B | 140W | 2.45GHz | 65V | SOT-502B | LDMOS | 18.5dB | 28V | 1.3A | |
BLF2425M8LS140112 | NOW AMPLEON, BLF2425M8LS140, POW | NXP USA Inc. | 140W | 2.45GHz | 65V | LDMOS | 19dB | 28V | 1.3A | |||
MMRF1311HR5 | TRANS 470-860MHZ 600W 50V | NXP USA Inc. | NI-1230-4H | 140W | 470MHz ~ 860MHz | 50V | SOT-979A | LDMOS | 20dB |
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