-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Operating Temperature
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MSCSM120TLM08CAG | PM-MOSFET-SIC-SBD-SP6C | Microchip Technology | SP6C | 1378W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 4 N-Channel (Three Level Inverter) | 1200V (1.2kV) | 333A (Tc) | Silicon Carbide (SiC) | 7.8mOhm @ 80A, 20V | 2.8V @ 4mA | 928nC @ 20V | 12000pF @ 1000V |
| MSCSM70AM025CT6AG | PM-MOSFET-SIC-SBD~-SP6C | Microchip Technology | SP6C | Chassis Mount | Module | 700V | 538A (Tc) | ||||||||
| MSCSM120AM042CT6AG | PM-MOSFET-SIC-SBD~-SP6C | Microchip Technology | SP6C | 2.031kW (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 495A (Tc) | Silicon Carbide (SiC) | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 1392nC @ 20V | 18.1pF @ 1000V |
| MSCSM120AM027CT6AG | PM-MOSFET-SIC-SBD~-SP6C | Microchip Technology | SP6C | 2.97kW (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 733A (Tc) | Silicon Carbide (SiC) | 3.5mOhm @ 360A, 20V | 2.8V @ 9mA | 2088nC @ 20V | 27000pF @ 1000V |
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