• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 4
  • MSCSM120TLM08CAG
    PM-MOSFET-SIC-SBD-SP6C
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP6C
    • FET Type: 4 N-Channel (Three Level Inverter)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
    • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
    • Vgs(th) (Max) @ Id: 2.8V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
    • Power - Max: 1378W (Tc)
    Info from the market
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    • Offers with a price:
    • Offers in stock:
  • MSCSM70AM025CT6AG
    PM-MOSFET-SIC-SBD~-SP6C
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: SP6C
    • Drain to Source Voltage (Vdss): 700V
    • Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
    Info from the market
    • Total warehouses:
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    • Offers with a price:
    • Offers in stock:
  • MSCSM120AM042CT6AG
    PM-MOSFET-SIC-SBD~-SP6C
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP6C
    • FET Type: 2 N Channel (Phase Leg)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
    • Vgs(th) (Max) @ Id: 2.8V @ 6mA
    • Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
    • Power - Max: 2.031kW (Tc)
    Info from the market
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    • Offers with a price:
    • Offers in stock:
  • MSCSM120AM027CT6AG
    PM-MOSFET-SIC-SBD~-SP6C
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP6C
    • FET Type: 2 N Channel (Phase Leg)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
    • Vgs(th) (Max) @ Id: 2.8V @ 9mA
    • Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
    • Power - Max: 2.97kW (Tc)
    Info from the market
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