Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Microchip Technology SP6C LI
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: Module
- Supplier Device Package: SP6C LI
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 388A (Tc)
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
- Vgs(th) (Max) @ Id: 4V @ 90mA
- Gate Charge (Qg) (Max) @ Vgs: 966nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 16700pF @ 1000V
- Power - Max: 1754W (Tc)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: Module
- Supplier Device Package: SP6C LI
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 631A (Tc)
- Rds On (Max) @ Id, Vgs: 3.4mOhm @ 500A, 20V
- Vgs(th) (Max) @ Id: 4V @ 150mA
- Gate Charge (Qg) (Max) @ Vgs: 1610nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 27900pF @ 1000V
- Power - Max: 2778W (Tc)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: Module
- Supplier Device Package: SP6C LI
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 742A (Tc)
- Rds On (Max) @ Id, Vgs: 2.85mOhm @ 600A, 20V
- Vgs(th) (Max) @ Id: 4V @ 180mA
- Gate Charge (Qg) (Max) @ Vgs: 1932nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 33500pF @ 1000V
- Power - Max: 3200W (Tc)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: Module
- Supplier Device Package: SP6C LI
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1kV
- Power - Max: 3.215kW (Tc)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: Module
- Supplier Device Package: SP6C LI
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV
- Power - Max: 2.031kW (Tc)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: Module
- Supplier Device Package: SP6C LI
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
- Rds On (Max) @ Id, Vgs: 11.7mOhm @ 300A, 20V
- Vgs(th) (Max) @ Id: 4V @ 108mA
- Gate Charge (Qg) (Max) @ Vgs: 1128nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 1000V
- Power - Max: 1780W (Tc)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: Module
- Supplier Device Package: SP6C LI
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 264A (Tc)
- Rds On (Max) @ Id, Vgs: 8.7mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 4V @ 60mA
- Gate Charge (Qg) (Max) @ Vgs: 690nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 1000V
- Power - Max: 1350W (Tc)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C LI
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: Module
- Supplier Device Package: SP6C LI
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V
- Power - Max: 3.75kW (Tc)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100