-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Operating Temperature
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MSCMC120AM04CT6LIAG | PM-MOSFET-SIC-SBD~-SP6C LI | Microchip Technology | SP6C LI | 1754W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 388A (Tc) | Silicon Carbide (SiC) | 5.7mOhm @ 300A, 20V | 4V @ 90mA | 966nC @ 20V | 16700pF @ 1000V |
| MSCMC120AM03CT6LIAG | PM-MOSFET-SIC-SBD~-SP6C LI | Microchip Technology | SP6C LI | 2778W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 631A (Tc) | Silicon Carbide (SiC) | 3.4mOhm @ 500A, 20V | 4V @ 150mA | 1610nC @ 20V | 27900pF @ 1000V |
| MSCMC120AM02CT6LIAG | PM-MOSFET-SIC-SBD~-SP6C LI | Microchip Technology | SP6C LI | 3200W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 742A (Tc) | Silicon Carbide (SiC) | 2.85mOhm @ 600A, 20V | 4V @ 180mA | 1932nC @ 20V | 33500pF @ 1000V |
| MSCSM120AM03CT6LIAG | PM-MOSFET-SIC-SBD~-SP6C LI | Microchip Technology | SP6C LI | 3.215kW (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 805A (Tc) | Silicon Carbide (SiC) | 3.1mOhm @ 400A, 20V | 2.8V @ 10mA | 2320nC @ 20V | 30200pF @ 1kV |
| MSCSM120AM042CT6LIAG | PM-MOSFET-SIC-SBD~-SP6C LI | Microchip Technology | SP6C LI | 2.031kW (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 495A (Tc) | Silicon Carbide (SiC) | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 1392nC @ 20V | 18100pF @ 1kV |
| MSCMC170AM08CT6LIAG | PM-MOSFET-SIC-SBD~-SP6C LI | Microchip Technology | SP6C LI | 1780W (Tc) | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 2 N Channel (Phase Leg) | 1700V (1.7kV) | 280A (Tc) | Silicon Carbide (SiC) | 11.7mOhm @ 300A, 20V | 4V @ 108mA | 1128nC @ 20V | 22000pF @ 1000V |
| MSCMC120AM07CT6LIAG | PM-MOSFET-SIC-SBD~-SP6C LI | Microchip Technology | SP6C LI | 1350W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 264A (Tc) | Silicon Carbide (SiC) | 8.7mOhm @ 240A, 20V | 4V @ 60mA | 690nC @ 20V | 11400pF @ 1000V |
| MSCSM70AM025CT6LIAG | PM-MOSFET-SIC-SBD~-SP6C LI | Microchip Technology | SP6C LI | Chassis Mount | Module | 700V | 538A (Tc) | ||||||||
| MSCSM120AM02CT6LIAG | PM-MOSFET-SIC-SBD~-SP6C LI | Microchip Technology | SP6C LI | 3.75kW (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 947A (Tc) | Silicon Carbide (SiC) | 2.6mOhm @ 480A, 20V | 2.8V @ 12mA | 2784nC @ 20V | 36240pF @ 1000V |
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