-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Operating Temperature
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MSCSM120AM50CT1AG | PM-MOSFET-SIC-SBD~-SP1F | Microchip Technology | SP1F | 245W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 55A (Tc) | Silicon Carbide (SiC) | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137nC @ 20V | 1990pF @ 1000V |
| MSCSM120AM16CT1AG | PM-MOSFET-SIC-SBD~-SP1F | Microchip Technology | SP1F | 745W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 173A (Tc) | Silicon Carbide (SiC) | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464nC @ 20V | 6040pF @ 1000V |
| MSCSM70AM19CT1AG | PM-MOSFET-SIC-SBD~-SP1F | Microchip Technology | SP1F | 365W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 700V | 124A (Tc) | Silicon Carbide (SiC) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V |
| MSCSM120AM31CT1AG | PM-MOSFET-SIC-SBD~-SP1F | Microchip Technology | SP1F | 395W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 1200V (1.2kV) | 89A (Tc) | Silicon Carbide (SiC) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V |
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