• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 4
  • MSCSM120AM50CT1AG
    PM-MOSFET-SIC-SBD~-SP1F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP1F
    • FET Type: 2 N Channel (Phase Leg)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
    • Vgs(th) (Max) @ Id: 2.7V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
    • Power - Max: 245W (Tc)
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • MSCSM120AM16CT1AG
    PM-MOSFET-SIC-SBD~-SP1F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP1F
    • FET Type: 2 N Channel (Phase Leg)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
    • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
    • Vgs(th) (Max) @ Id: 2.8V @ 2mA
    • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
    • Power - Max: 745W (Tc)
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • MSCSM70AM19CT1AG
    PM-MOSFET-SIC-SBD~-SP1F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP1F
    • FET Type: 2 N Channel (Phase Leg)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 700V
    • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
    • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
    • Power - Max: 365W (Tc)
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • MSCSM120AM31CT1AG
    PM-MOSFET-SIC-SBD~-SP1F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP1F
    • FET Type: 2 N Channel (Phase Leg)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
    • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
    • Vgs(th) (Max) @ Id: 2.8V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
    • Power - Max: 395W (Tc)
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • 10
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  • 100